2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479)
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Published By American Vacuum Soc

0965157741

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) ◽

10.1109/ppid.2000.870659 ◽

2002 ◽

Cited By ~ 8

Author(s):

J. Carrere ◽

J.-C. Oberlin ◽

M. Haond

Keyword(s):

Inductively Coupled Plasma ◽

Inductively Coupled

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Hydrogen induced and plasma charging enhanced positive charge generation in gate oxides

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) ◽

10.1109/ppid.2000.870639 ◽

2002 ◽

Cited By ~ 1

Author(s):

C.Z. Zhao ◽

J.F. Zhang ◽

G. Groeseneken ◽

R. Degraeve ◽

J.N. Ellis ◽

...

Keyword(s):

Positive Charge ◽

Charge Generation ◽

Gate Oxides

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Reduction of QBD failures in a 0.5 μm BiCMOS process by reducing DC bias

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) ◽

10.1109/ppid.2000.870597 ◽

2002 ◽

Author(s):

A. Macphie

Keyword(s):

Bicmos Process ◽

Dc Bias

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Study of chamber history effect in oxide etcher

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) ◽

10.1109/ppid.2000.870602 ◽

2002 ◽

Author(s):

C.H. Liao ◽

S.L. Pang ◽

B.J. Chang ◽

K.L. Lu

Keyword(s):

History Effect

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Direct experimental determination and modeling of VUV induced bulk conduction in dielectrics during plasma processing

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) ◽

10.1109/ppid.2000.870655 ◽

2002 ◽

Cited By ~ 6

Author(s):

M. Joshi ◽

J.P. McVittie ◽

K. Saraswat

Keyword(s):

Experimental Determination ◽

Plasma Processing

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Damage in III/V semiconductors caused by hard- and soft-etching plasmas

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) ◽

10.1109/ppid.2000.870644 ◽

2002 ◽

Author(s):

G. Franz ◽

R. Averbeck ◽

M. Auer ◽

J. Lorenz

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Fowler-Nordheim and hot-carrier stress study of latent plasma charging damage in various 50 Å gate dielectrics

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) ◽

10.1109/ppid.2000.870603 ◽

2002 ◽

Cited By ~ 1

Author(s):

T. Brozek ◽

J. Huber ◽

J. Walls

Keyword(s):

Gate Dielectrics ◽

Hot Carrier ◽

Stress Study ◽

Hot Carrier Stress

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Bias-plasma interaction in pulsed plasmas and its relation to damage mechanisms

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) ◽

10.1109/ppid.2000.870573 ◽

2002 ◽

Cited By ~ 2

Author(s):

M.V. Malyshev ◽

V.M. Donnelly

Keyword(s):

Damage Mechanisms ◽

Plasma Interaction ◽

Pulsed Plasmas

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Elimination of notch during gate polycide stack etching by adding nitrogen in over etch step

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) ◽

10.1109/ppid.2000.870594 ◽

2002 ◽

Author(s):

Bor-Wen Chan ◽

Y.H. Liou ◽

Min-Hwa Chi

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Plasma damage evaluation of an integrated in-situ directional resist stripping process in magnetically enhanced RIE etcher for dual damascene application

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) ◽

10.1109/ppid.2000.870631 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Ma ◽

M. Dahimene ◽

C. Bjorkman ◽

H. Shan ◽

R. Ramanathan

Keyword(s):

Damage Evaluation ◽

Plasma Damage ◽

Dual Damascene

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2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By American Vacuum Soc

Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process

Hydrogen induced and plasma charging enhanced positive charge generation in gate oxides

Reduction of QBD failures in a 0.5 μm BiCMOS process by reducing DC bias

Study of chamber history effect in oxide etcher

Direct experimental determination and modeling of VUV induced bulk conduction in dielectrics during plasma processing

Damage in III/V semiconductors caused by hard- and soft-etching plasmas

Fowler-Nordheim and hot-carrier stress study of latent plasma charging damage in various 50 Å gate dielectrics

Bias-plasma interaction in pulsed plasmas and its relation to damage mechanisms

Elimination of notch during gate polycide stack etching by adding nitrogen in over etch step

Plasma damage evaluation of an integrated in-situ directional resist stripping process in magnetically enhanced RIE etcher for dual damascene application

2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479)
Latest Publications