Hydrogen induced and plasma charging enhanced positive charge generation in gate oxides

2002 ◽  
Author(s):  
C.Z. Zhao ◽  
J.F. Zhang ◽  
G. Groeseneken ◽  
R. Degraeve ◽  
J.N. Ellis ◽  
...  
Keyword(s):  
Positive Charge ◽  
Charge Generation ◽  
Gate Oxides

Hydrogen induced positive charge generation in gate oxides

2001 ◽  
Vol 90 (4) ◽  
pp. 1911-1919 ◽  
Author(s):  
J. F. Zhang ◽  
C. Z. Zhao ◽  
G. Groeseneken ◽  
R. Degraeve ◽  
J. N. Ellis ◽  
...  
Keyword(s):  
Positive Charge ◽  
Charge Generation ◽  
Gate Oxides

Influence of the Gate Bias and Temperature on Positive Charge Generation in TFT Gate-Quality Amorphous Silicon Nitride Films

1991 ◽  
Vol 219 ◽  
Author(s):  
Jerzy Kanicki ◽  
Mythili Sankaran
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Charge Transport ◽  
Amorphous Silicon ◽  
Positive Charge ◽  
Gate Bias ◽  
Charge Generation ◽  
Illumination Time ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films

ABSTRACTWe report on the illumination time dependence of the generation of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to sub-bandgap illumination at different temperature in vacuum. The influence of film thickness and gate bias applied during illumination on the generation of positive charge is also described. We have found that a stretched-exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results.

Ultra-thick gate oxides: charge generation and its impact on reliability

2001 ◽  
Vol 41 (7) ◽  
pp. 1007-1010 ◽  
Author(s):  
Udo Schwalke ◽  
Martin Pölzl ◽  
Thomas Sekinger ◽  
Martin Kerber
Keyword(s):  
Charge Generation ◽  
Gate Oxides

Positive charge generation in metal‐oxide‐semiconductor capacitors

1991 ◽  
Vol 69 (4) ◽  
pp. 2512-2521 ◽  
Author(s):  
L. P. Trombetta ◽  
F. J. Feigl ◽  
R. J. Zeto
Keyword(s):  
Metal Oxide ◽  
Positive Charge ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Generation

Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

2002 ◽  
Vol 81 (4) ◽  
pp. 709-711 ◽  
Author(s):  
M. Houssa ◽  
J. L. Autran ◽  
A. Stesmans ◽  
M. M. Heyns
Keyword(s):  
Positive Charge ◽  
Gate Dielectric ◽  
Charge Generation ◽  
Interface Defect
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