Time Resolved Annealing of Interface Traps in Polysilicon Gate Metal‐Oxide‐Silicon Capacitors

1987 ◽  
Vol 134 (3) ◽  
pp. 674-681 ◽  
Author(s):  
Bruce J. Fishbein ◽  
Jeffrey T. Watt ◽  
James D. Plummer
Keyword(s):  
Metal Oxide ◽  
Interface Traps ◽  
Time Resolved ◽  
Polysilicon Gate ◽  
Metal Oxide Silicon

Positron Beam Technique For The Study Of Defects At The Si/SiO2 Interface Of A Polysilicon Gated MOS System

1996 ◽  
Vol 442 ◽  
Author(s):  
M. Clement ◽  
J. M. M. De Nijs ◽  
H. Schut ◽  
A. Van Veen ◽  
R. Mallee ◽  
...  
Keyword(s):  
Electric Field ◽  
Metal Oxide ◽  
Positron Beam ◽  
Polysilicon Gate ◽  
Polysilicon Layer ◽  
Metal Oxide Silicon ◽  
Beam Technique

AbstractThis work demonstrates that positrons implanted into a 60 nm n-type polysilicon layer with large grains, can be pushed out of this layer by an externally induced electric field. In the case of a metal-oxide-silicon (MOS) system with a such a polysilicon gate, polysilicon-implanted positrons can be efficiently transported towards the SiO2/Si interface where they all are collected. This technique offers new and interesting possibilities to study defects at the SiO2/Si interface of technologically important MOS systems.

scholarly journals A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

2021 ◽  
Vol 129 (5) ◽  
pp. 054501
Author(s):  
Jordan R. Nicholls ◽  
Arnar M. Vidarsson ◽  
Daniel Haasmann ◽  
Einar Ö. Sveinbjörnsson ◽  
Sima Dimitrijev
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps

Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors

2004 ◽  
Vol 19 (7) ◽  
pp. 870-876 ◽  
Author(s):  
Bin B Jie ◽  
K F Lo ◽  
Elgin Quek ◽  
Sanford Chu ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Silicon Transistors ◽  
Metal Oxide Silicon
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