Method for forming a titanium-germanium contact layer for thermostabilization of transistors

Objective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer titanium-germanium metallization to create a contact and remove heat from the collector junction of high-power semiconductor transistors on the reverse side of plates with formed structures is proposed. The proposed method ensures the quality of the soldered connection and thermal stabilization of semiconductor devices, increasing the reliability of the studied devices in radio electronic equipment systems.Results. This combination of sprayed metals provides a reliable contact to the collector area when the crystal is placed on the base of the case, which reduces the resistance of the ohmic transition and increases the output of suitable devices.Conclusion. Based on the results of experimental procedures, the optimal thicknesses of metal layers deposited on the reverse side of transistor crystals were obtained during the formation of metallization to fit crystals on the base of the case. The Ti-Ge system stability is studied. The technical result of the research is to improve the quality of planting by obtaining a uniform distribution of the Ti-Ge layer in a single technological cycle at a given temperature with a certain thickness for each metal separately.

HPV Sensing by CNTFET Array Nanobiosensor.

Women life is threatened by the cervical cancer each time worldwide. The cervical cancer high grade pre cancer is due to HPV E6 and E7 agents. Nano materials show a key role in medical analysis and action. CNTs (Carbon Nano Tube) have very unique electrical and mechanical properties which are useful in the bio-application. The conventional based biosensors can be improved by CNT based biosensors with respect to sensitivity, selectivity and simple in operation. In comparison with the silicon transistors, CNTFET (Carbon Nano Tube Field Effect Transistor) nano device takes less power and performs faster. The research paper covers working of CNTFET based nano biosensor to detect cervical cancer antibody. 4 x 4 CNTFET sensor array is designed to detect antibody variations on CNTFET gate. The sensor current varied from 4.286 µA to 15.435 µA for gate voltage varied from 0.2 V to 1.06 V. The improved 64 CNTFET based biosensor performs better in sensing the analyte of different concentrations.