Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown

B. Neri; P. Olivo; B. Riccò

doi:10.1063/1.98930

Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown

Applied Physics Letters ◽

10.1063/1.98930 ◽

1987 ◽

Vol 51 (25) ◽

pp. 2167-2169 ◽

Cited By ~ 75

Author(s):

B. Neri ◽

P. Olivo ◽

B. Riccò

Keyword(s):

Metal Oxide ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Oxide Breakdown ◽

Metal Oxide Silicon

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Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00059-7 ◽

2000 ◽

Vol 40 (11) ◽

pp. 1897-1903 ◽

Cited By ~ 6

Author(s):

J.A Chroboczek ◽

G Ghibaudo

Keyword(s):

Metal Oxide ◽

Heterojunction Bipolar Transistors ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Bipolar Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3009664 ◽

2008 ◽

Vol 104 (9) ◽

pp. 094505 ◽

Cited By ~ 9

Author(s):

S. L. Rumyantsev ◽

M. S. Shur ◽

M. E. Levinshtein ◽

P. A. Ivanov ◽

J. W. Palmour ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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Latent Damage Generation in Thin Oxides of Metal-Oxide-Semiconductor Devices under High-Field Impulse Stress and Damage Characterization Using Low-Frequency Noise Measurement

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.6770 ◽

2001 ◽

Vol 40 (Part 1, No. 12) ◽

pp. 6770-6777 ◽

Cited By ~ 3

Author(s):

Wai Kin Chim ◽

Peng Soon Lim

Keyword(s):

Metal Oxide ◽

High Field ◽

Semiconductor Devices ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Noise Measurement ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Damage Characterization

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Studies on Metal–Oxide–Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3606 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3606-3608 ◽

Cited By ~ 3

Author(s):

Nicolas Clement ◽

Hiroshi Inokawa ◽

Yukinori Ono

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Effect Transistor

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The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal–Oxide–Semiconductor Field Effect Transistors under Dynamic Body Biases

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.084201 ◽

2010 ◽

Vol 49 (8) ◽

pp. 084201 ◽

Cited By ~ 1

Author(s):

Kuo-Liang Yeh ◽

Chih-You Ku ◽

Jyh-Chyurn Guo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Axial Strain ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

The Impact

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Low-Frequency Noise in Si1-xGexp-Channel Metal Oxide Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.5290 ◽

2001 ◽

Vol 40 (Part 1, No. 9A) ◽

pp. 5290-5293 ◽

Cited By ~ 13

Author(s):

Toshiaki Tsuchiya ◽

Takashi Matsuura ◽

Junichi Murota

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

IEEE Electron Device Letters ◽

10.1109/led.2009.2015586 ◽

2009 ◽

Vol 30 (5) ◽

pp. 523-525 ◽

Cited By ~ 6

Author(s):

Hyun-Sik Choi ◽

Seung-Ho Hong ◽

Rock-Hyun Baek ◽

Kyong-Taek Lee ◽

Chang-Yong Kang ◽

...

Keyword(s):

Gate Dielectric ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Oxide Breakdown

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Empirical relationship between the low‐frequency noise spectral density and the transconductance of silicon‐on‐insulatorn‐channel metal‐oxide‐semiconductor transistors

Applied Physics Letters ◽

10.1063/1.112825 ◽

1994 ◽

Vol 65 (15) ◽

pp. 1946-1948 ◽

Cited By ~ 9

Author(s):

E. Simoen ◽

C. Claeys

Keyword(s):

Metal Oxide ◽

Spectral Density ◽

Empirical Relationship ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Noise Spectral Density

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Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Applied Physics Letters ◽

10.1063/1.3491211 ◽

2010 ◽

Vol 97 (12) ◽

pp. 123501 ◽

Cited By ~ 12

Author(s):

Cheng-Wen Kuo ◽

San-Lein Wu ◽

Shoou-Jinn Chang ◽

Yao-Tsung Huang ◽

Yao-Chin Cheng ◽

...

Keyword(s):

Metal Oxide ◽

Tensile Strain ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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Analysis of the Low-Frequency Noise Reduction in Si(100) Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc01 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC01 ◽

Cited By ~ 3

Author(s):

Philippe Gaubert ◽

Akinobu Teramoto ◽

Rihito Kuroda ◽

Yukihisa Nakao ◽

Hiroaki Tanaka ◽

...

Keyword(s):

Metal Oxide ◽

Noise Reduction ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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