Positron Beam Technique For The Study Of Defects At The Si/SiO2 Interface Of A Polysilicon Gated MOS System
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AbstractThis work demonstrates that positrons implanted into a 60 nm n-type polysilicon layer with large grains, can be pushed out of this layer by an externally induced electric field. In the case of a metal-oxide-silicon (MOS) system with a such a polysilicon gate, polysilicon-implanted positrons can be efficiently transported towards the SiO2/Si interface where they all are collected. This technique offers new and interesting possibilities to study defects at the SiO2/Si interface of technologically important MOS systems.
1987 ◽
Vol 134
(3)
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pp. 674-681
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2004 ◽
Vol 19
(7)
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pp. 870-876
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1997 ◽
Vol 299
(1-2)
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pp. 183-189
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