High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

2008 ◽  
Vol 104 (9) ◽  
pp. 094512 ◽  
Author(s):  
Zuhui Chen ◽  
Bin B Jie ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Interface Traps ◽  
Potential Well ◽  
High Concentration ◽  
Concentration Effects ◽  
Current Voltage ◽  
Silicon Transistors ◽  
Metal Oxide Silicon ◽  
Dc Current

Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors

2004 ◽  
Vol 19 (7) ◽  
pp. 870-876 ◽  
Author(s):  
Bin B Jie ◽  
K F Lo ◽  
Elgin Quek ◽  
Sanford Chu ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Silicon Transistors ◽  
Metal Oxide Silicon

Profiling interface traps in MOS transistors by the DC current-voltage method

1996 ◽  
Vol 17 (2) ◽  
pp. 72-74 ◽  
Author(s):  
Chih-Tang Sah ◽  
A. Neugroschel ◽  
K.M. Han ◽  
J.T. Kavalieros
Keyword(s):  
Interface Traps ◽  
Mos Transistors ◽  
Current Voltage ◽  
Dc Current
Sign in / Sign up

Export Citation Format

Share Document