Theoretical accuracy of using Boltzmann and ionized impurity approximations in the analyses of recombination current at interface traps in metal-oxide-silicon structures

Zuhui Chen; Bin B. Jie; Chih-Tang Sah

doi:10.1063/1.2159085

Theoretical accuracy of using Boltzmann and ionized impurity approximations in the analyses of recombination current at interface traps in metal-oxide-silicon structures

Journal of Applied Physics ◽

10.1063/1.2159085 ◽

2006 ◽

Vol 99 (2) ◽

pp. 024502 ◽

Cited By ~ 3

Author(s):

Zuhui Chen ◽

Bin B. Jie ◽

Chih-Tang Sah

Keyword(s):

Metal Oxide ◽

Interface Traps ◽

Silicon Structures ◽

Metal Oxide Silicon ◽

Recombination Current ◽

Theoretical Accuracy

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Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structures

Applied Physics Letters ◽

10.1063/1.94566 ◽

1984 ◽

Vol 44 (1) ◽

pp. 96-98 ◽

Cited By ~ 92

Author(s):

P. M. Lenahan ◽

P. V. Dressendorfer

Keyword(s):

Metal Oxide ◽

Silicon Structures ◽

Metal Oxide Silicon ◽

Gamma Irradiated

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Electrical characterization of low‐pressure chemical‐vapor‐deposited silicon dioxide metal‐oxide‐silicon structures

Journal of Applied Physics ◽

10.1063/1.353093 ◽

1993 ◽

Vol 73 (5) ◽

pp. 2397-2401 ◽

Cited By ~ 9

Author(s):

S. S. Ang ◽

Y. J. Shi ◽

W. D. Brown

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Electrical Characterization ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Silicon Structures ◽

Metal Oxide Silicon

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Deep trapping of implanted Na+ and Li+ ions near the Si/SiO2 interface in metal-oxide-silicon structures

Solid-State Electronics ◽

10.1016/0038-1101(85)90115-7 ◽

1985 ◽

Vol 28 (5) ◽

pp. 509-516 ◽

Cited By ~ 4

Author(s):

G. Greeuw ◽

J.F. Verwey

Keyword(s):

Metal Oxide ◽

Silicon Structures ◽

Metal Oxide Silicon

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Valence band electron tunneling in metal-oxide-silicon structures

Applied Surface Science ◽

10.1016/0169-4332(87)90104-8 ◽

1987 ◽

Vol 30 (1-4) ◽

pp. 298-303 ◽

Cited By ~ 11

Author(s):

A. Modelli

Keyword(s):

Metal Oxide ◽

Valence Band ◽

Electron Tunneling ◽

Band Electron ◽

Silicon Structures ◽

Metal Oxide Silicon ◽

Valence Band Electron

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Irradiation induced pulsations of reverse biased metal oxide/silicon structures

Applied Physics Letters ◽

10.1063/1.2773950 ◽

2007 ◽

Vol 91 (8) ◽

pp. 083512 ◽

Cited By ~ 5

Author(s):

D. Fink ◽

A. Kiv ◽

D. Fuks ◽

M. Tabacnics ◽

M. de A. Rizutto ◽

...

Keyword(s):

Metal Oxide ◽

Silicon Structures ◽

Metal Oxide Silicon

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Gate polarity dependence of impact ionization probabilities in metal-oxide-silicon structures under Fowler–Nordheim stress

Solid-State Electronics ◽

10.1016/s0038-1101(01)00261-1 ◽

2002 ◽

Vol 46 (2) ◽

pp. 279-285 ◽

Cited By ~ 10

Author(s):

Piyas Samanta ◽

C.K. Sarkar

Keyword(s):

Metal Oxide ◽

Impact Ionization ◽

Silicon Structures ◽

Metal Oxide Silicon

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Influence of X-Ray Irradiations on the Charge Distributions in Metal-Oxide-Silicon Structures

The Surface Properties of Oxidized Silicon ◽

10.1007/978-3-662-40210-8_5 ◽

1967 ◽

pp. 81-89

Author(s):

E. Kooi

Keyword(s):

Metal Oxide ◽

X Ray ◽

Charge Distributions ◽

Silicon Structures ◽

Metal Oxide Silicon

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Quasi-static and high frequency C(V)-response of thin platinum metal—oxide—silicon structures to ammonia

Sensors and Actuators ◽

10.1016/0250-6874(88)80026-x ◽

1988 ◽

Vol 14 (4) ◽

pp. 369-386 ◽

Cited By ~ 19

Author(s):

T. Fare ◽

A. Spetz ◽

M. Armgarth ◽

I. Lundström

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Platinum Metal ◽

Silicon Structures ◽

Metal Oxide Silicon ◽

Thin Platinum

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New properties created in metal-oxide-silicon structures by reducing their dimensional parameters to the nanometer range

Technical Physics Letters ◽

10.1134/1.1261570 ◽

1997 ◽

Vol 23 (2) ◽

pp. 157-159 ◽

Cited By ~ 1

Author(s):

G. G. Kareva

Keyword(s):

Metal Oxide ◽

Nanometer Range ◽

Silicon Structures ◽

Dimensional Parameters ◽

Metal Oxide Silicon

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Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures

Applied Physics Letters ◽

10.1063/1.2734478 ◽

2007 ◽

Vol 90 (17) ◽

pp. 173513 ◽

Cited By ~ 26

Author(s):

J. T. Ryan ◽

P. M. Lenahan ◽

G. Bersuker ◽

P. Lysaght

Keyword(s):

Electron Spin Resonance ◽

Metal Oxide ◽

Electron Spin ◽

Hafnium Oxide ◽

Interfacial Layer ◽

Spin Resonance ◽

Silicon Structures ◽

Metal Oxide Silicon

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