Oxide Charge Characteristics of Low Temperature MOS (Metal-Oxide-Silicon) Oxide Films.

1984 ◽  
Author(s):  
S. R. Butler ◽  
F. J. Feigl
Keyword(s):  
Low Temperature ◽  
Metal Oxide ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxide Charge ◽  
Metal Oxide Silicon

scholarly journals Synthesis and Characterization of Mixed Metal Oxide Nanocomposite Energetic Materials

2003 ◽  
Vol 800 ◽  
Author(s):  
Brady J. Clapsaddle ◽  
Lihua Zhao ◽  
Alex E. Gash ◽  
Joe H. Satcher ◽  
Kenneth J. Shea ◽  
...  
Keyword(s):  
Mass Transport ◽  
Metal Oxide ◽  
Energetic Materials ◽  
Silicon Oxide ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Mixed Metal Oxide ◽  
Organic Additives ◽  
Metal Oxide Silicon

ABSTRACTIn the field of composite energetic materials, properties such as ingredient distribution, particle size, and morphology, affect both sensitivity and performance. Since the reaction kinetics of composite energetic materials are typically controlled by the mass transport rates between reactants, one would anticipate new and potentially exceptional performance from energetic nanocomposites. We have developed a new method of making nanostructured energetic materials, specifically explosives, propellants, and pyrotechnics, using sol-gel chemistry. A novel sol-gel approach has proven successful in preparing metal oxide/silicon oxide nanocomposites in which the metal oxide is the major component. Two of the metal oxides are tungsten trioxide and iron(III) oxide, both of which are of interest in the field of energetic materials. Furthermore, due to the large availability of organically functionalized silanes, the silicon oxide phase can be used as a unique way of introducing organic additives into the bulk metal oxide materials. As a result, the desired organic functionality is well dispersed throughout the composite material on the nanoscale. By introducing a fuel metal into the metal oxide/silicon oxide matrix, energetic materials based on thermite reactions can be fabricated. The resulting nanoscale distribution of all the ingredients displays energetic properties not seen in its microscale counterparts due to the expected increase of mass transport rates between the reactants. The synthesis and characterization of these metal oxide/silicon oxide nanocomposites and their performance as energetic materials will be discussed.

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

Low-temperature silicon oxide films deposited using a CO2 laser

1992 ◽  
Vol 54 ◽  
pp. 112-116 ◽  
Author(s):  
D. Fernández ◽  
P. González ◽  
J. Pou ◽  
B. León ◽  
M. Pérez-Amor
Keyword(s):  
Low Temperature ◽  
Co2 Laser ◽  
Silicon Oxide ◽  
Oxide Films
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