Linear cofactor difference method of MOSFET subthreshold characteristics for extracting interface traps induced by gate oxide stress test

2002 ◽  
Vol 49 (2) ◽  
pp. 331-334 ◽  
Author(s):  
Jin He ◽  
Xing Zhang ◽  
Ru Huang ◽  
Yangyuan Wang
Keyword(s):  
Difference Method ◽  
Stress Test ◽  
Gate Oxide ◽  
Interface Traps ◽  
Oxide Stress

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

2020 ◽  
Vol 1004 ◽  
pp. 635-641
Author(s):  
Peyush Pande ◽  
Sima Dimitrijev ◽  
Daniel Haasmann ◽  
Hamid Amini Moghadam ◽  
Philip Tanner ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Comparative Analysis ◽  
Direct Measurement ◽  
Measurement Technique ◽  
Measurement Method ◽  
Gate Oxide ◽  
Interface Traps ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Direct Measurement Method

This paper presents a comparative analysis of the electrically active near-interface traps, energetically located above the bottom of conduction band. Two different samples of N-type SiC MOS capacitors were fabricated with gate oxides grown in (1) dry O2 (as-grown) and (2) dry O2 annealed in nitric oxide (nitride). Measurements performed by the direct measurement method revealed that the traps located further away from the SiO2/SiC interface are removed by nitridation. A spatially localized behaviour of NITs is observed only in the nitrided gate oxide but not in the as-grown gate oxide.

Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors

2016 ◽  
Vol 858 ◽  
pp. 611-614 ◽  
Author(s):  
Martin Domeij ◽  
Benedetto Buono ◽  
Krister Gumaelius ◽  
Fredrik Allerstam
Keyword(s):  
Gate Oxide ◽  
Gate Bias ◽  
Time Resolved ◽  
Channel Mobility ◽  
Oxide Breakdown ◽  
Bias Stress ◽  
Breakdown Time ◽  
Oxide Stress ◽  
Moderate Stress ◽  
Gate Bias Stress

Lateral SiC MOSFETs and NMOS capacitors were fabricated and electrically evaluated for channel mobility, DIT and gate oxide breakdown. Time resolved measurements of VTH and VFB drift during gate bias stress were performed resulting in logarithmic time dependence for moderate stress time and temperature. Gate bias stress was also carried out during 20 hours at temperatures up to 225 C. Stress times resulting in a VTH shift of 500 mV were determined and an activation energy EA=0.86 eV was extracted for the VTH drift.

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide

2010 ◽  
Vol 645-648 ◽  
pp. 515-518 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Yuki Oshiro ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Direct Oxidation ◽  
Mos Capacitors

Characteristics of metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated by direct oxidation of C-face 4H-SiC in NO were investigated. It was found that nitridation of the C-face 4H-SiC MOS interface generates near-interface traps (NITs) in the oxide. These traps capture channel mobile electrons and degrade the performance of MOSFETs. The NITs can be reduced by unloading the samples at room temperature after oxidation. It is important to reduce not only the interface states but also the NITs to fabricate high-performance C-face 4H-SiC MOSFETs with nitrided gate oxide.

scholarly journals Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1449
Author(s):  
Yifan Jia ◽  
Shengjun Sun ◽  
Xiangtai Liu ◽  
Qin Lu ◽  
Ke Qin ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gate Oxide ◽  
Sio2 Film ◽  
Interface Traps ◽  
Hydrogen Atoms ◽  
Mos Capacitors ◽  
Bias Stress ◽  
Current Voltage ◽  
Short Time ◽  
Secondary Ion

Hydrogen-nitrogen hybrid passivation treatment for growing high-property gate oxide films by high-temperature wet oxidation, with short-time NO POA, is proposed and demonstrated. Secondary ion mass spectroscopy (SIMS) measurements show that the proposed method causes hydrogen and appropriate nitrogen atoms to accumulate in Gaussian-like distributions near the SiO2/SiC interface. Moreover, the hydrogen atoms are also incorporated into the grown SiO2 layer, with a concentration of approximately 1 × 1019 cm−3. The conductance characteristics indicate that the induced hydrogen and nitrogen passivation atoms near the interface can effectively reduce the density of interface traps and near-interface traps. The current-voltage (I-V), X-ray photoelectron spectroscopy (XPS), and time-dependent bias stress (TDBS) with ultraviolet light (UVL) irradiation results demonstrate that the grown SiO2 film with the incorporated hydrogen passivation atoms can effectively reduce the density of oxide electron traps, leading to the barrier height being improved and the leakage current being reduced.

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