gate bias stress Latest Research Papers

Degradation Behavior and Mechanisms of E-mode GaN HEMTs with p-GaN Gate under High Temperature Gate Bias Stress

10.1109/phm-nanjing52125.2021.9612888 ◽

2021 ◽

Author(s):

WenYang Chen ◽

Y.Q. Chen ◽

KuiWei Geng

Keyword(s):

High Temperature ◽

Gate Bias ◽

Degradation Behavior ◽

Bias Stress ◽

Gan Hemts ◽

Gate Bias Stress

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Degradation and its Fast Recovery in a-IGZO Thin-Film Transistors under Negative Gate Bias Stress

Chinese Physics B ◽

10.1088/1674-1056/ac05aa ◽

2021 ◽

Author(s):

Jianing Guo ◽

Dongli Zhang ◽

Mingxiang Wang ◽

Huaisheng Wang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Bias ◽

Fast Recovery ◽

Bias Stress ◽

Gate Bias Stress

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Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abff38 ◽

2021 ◽

Author(s):

Hiroki Sakata ◽

Dai Okamoto ◽

Mitsuru SOMETANI ◽

Mitsuo OKAMOTO ◽

Hirohisa Hirai ◽

...

Keyword(s):

Threshold Voltage ◽

Accurate Determination ◽

Gate Bias ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Bias Stress ◽

Gate Bias Stress

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Combined effects of proton irradiation and forward gate-bias stress on the interface traps in AlGaN/GaN heterostructure

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2021.3112767 ◽

2021 ◽

pp. 1-1

Author(s):

Tian Zhu ◽

Xue-Feng Zheng ◽

Jia Wang ◽

Mao-Sen Wang ◽

Kai Chen ◽

...

Keyword(s):

Proton Irradiation ◽

Combined Effects ◽

Interface Traps ◽

Gate Bias ◽

Bias Stress ◽

Gan Heterostructure ◽

Gate Bias Stress

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Gate-bias instability of few-layer WSe2 field effect transistors

RSC Advances ◽

10.1039/d0ra09376a ◽

2021 ◽

Vol 11 (12) ◽

pp. 6818-6824

Author(s):

Shaofeng Wen ◽

Changyong Lan ◽

Chun Li ◽

Sihan Zhou ◽

Tianying He ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Gate Bias ◽

Bias Stress ◽

Effect Transistor ◽

P Type ◽

Bias Instability ◽

Gate Bias Stress

The performance of the few-layer p-type WSe2-based field effect transistor is sensitive to the environment and gate bias stress.

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Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c17317 ◽

2020 ◽

Vol 12 (50) ◽

pp. 56330-56337

Author(s):

Changyong Lan ◽

SenPo Yip ◽

Xiaolin Kang ◽

You Meng ◽

Xiuming Bu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Bias ◽

Bias Stress ◽

Hysteresis Characteristics ◽

Gate Bias Stress

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Suppression of Edge Effect Induced by Positive Gate Bias Stress in Low-Temperature Polycrystalline Silicon TFTs With Channel Width Extension Over Source/Drain Regions

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3033516 ◽

2020 ◽

Vol 67 (12) ◽

pp. 5552-5556

Author(s):

Yu-Xuan Wang ◽

Mao-Chou Tai ◽

Ting-Chang Chang ◽

Shin-Ping Huang ◽

Yu-Zhe Zheng ◽

...

Keyword(s):

Low Temperature ◽

Edge Effect ◽

Polycrystalline Silicon ◽

Channel Width ◽

Gate Bias ◽

Bias Stress ◽

Gate Bias Stress

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Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS‐HEMTs

physica status solidi (a) ◽

10.1002/pssa.202000585 ◽

2020 ◽

pp. 2000585

Author(s):

Anthony Calzolaro ◽

Nadine Szabó ◽

Andreas Großer ◽

Jan Gärtner ◽

Thomas Mikolajick ◽

...

Keyword(s):

Interface Properties ◽

Gate Bias ◽

Bias Stress ◽

Gate Bias Stress

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The origin of gate bias stress instability and hysteresis in monolayer WS2 transistors

Nano Research ◽

10.1007/s12274-020-3003-6 ◽

2020 ◽

Vol 13 (12) ◽

pp. 3278-3285

Author(s):

Changyong Lan ◽

Xiaolin Kang ◽

You Meng ◽

Renjie Wei ◽

Xiuming Bu ◽

...

Keyword(s):

Gate Bias ◽

Bias Stress ◽

Gate Bias Stress

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The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs

Journal of Computational Electronics ◽

10.1007/s10825-020-01573-8 ◽

2020 ◽

Vol 19 (4) ◽

pp. 1555-1563

Author(s):

Nicolò Zagni ◽

Alessandro Chini ◽

Francesco Maria Puglisi ◽

Paolo Pavan ◽

Giovanni Verzellesi

Keyword(s):

Threshold Voltage ◽

Gate Bias ◽

Bias Stress ◽

Gate Bias Stress

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gate bias stress
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Degradation Behavior and Mechanisms of E-mode GaN HEMTs with p-GaN Gate under High Temperature Gate Bias Stress

Degradation and its Fast Recovery in a-IGZO Thin-Film Transistors under Negative Gate Bias Stress

Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method

Combined effects of proton irradiation and forward gate-bias stress on the interface traps in AlGaN/GaN heterostructure

Gate-bias instability of few-layer WSe2 field effect transistors

Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors

Suppression of Edge Effect Induced by Positive Gate Bias Stress in Low-Temperature Polycrystalline Silicon TFTs With Channel Width Extension Over Source/Drain Regions

Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS‐HEMTs

The origin of gate bias stress instability and hysteresis in monolayer WS2 transistors

The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs

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gate bias stressRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Degradation Behavior and Mechanisms of E-mode GaN HEMTs with p-GaN Gate under High Temperature Gate Bias Stress

Degradation and its Fast Recovery in a-IGZO Thin-Film Transistors under Negative Gate Bias Stress

Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method

Combined effects of proton irradiation and forward gate-bias stress on the interface traps in AlGaN/GaN heterostructure

Gate-bias instability of few-layer WSe2 field effect transistors

Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors

Suppression of Edge Effect Induced by Positive Gate Bias Stress in Low-Temperature Polycrystalline Silicon TFTs With Channel Width Extension Over Source/Drain Regions

Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS‐HEMTs

The origin of gate bias stress instability and hysteresis in monolayer WS2 transistors

The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs

gate bias stress
Recently Published Documents