2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
Latest Publications

TOTAL DOCUMENTS

121

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780376498

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Effect of gate oxide breakdown on RF device and circuit performance

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197711 ◽

2003 ◽

Cited By ~ 18

Author(s):

Hong Yang ◽

J.S. Yuan ◽

Enjun Xiao

Keyword(s):

Gate Oxide ◽

Circuit Performance ◽

Oxide Breakdown

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Evidence for hydrogen-related defects during NBTl stress in p-MOSFETs

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197741 ◽

2003 ◽

Cited By ~ 47

Author(s):

V. Huard ◽

F. Monsieur ◽

G. Ribes ◽

S. Bruyere

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Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND flash memory cells

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197798 ◽

2003 ◽

Author(s):

Jae-Duk Lee ◽

Jeong-Hyuk Choi ◽

Donggun Park ◽

Kinam Kim

Keyword(s):

Flash Memory ◽

Memory Cells ◽

Nand Flash ◽

Nand Flash Memory ◽

Data Retention ◽

Current Stress ◽

Retention Characteristics

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An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devices

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197746 ◽

2003 ◽

Cited By ~ 2

Author(s):

S.-J. Chen ◽

T.-C. Lin ◽

D.-K. Lo ◽

J.-J. Yang ◽

S.S. Chung ◽

...

Keyword(s):

Full Range ◽

Gate Oxide ◽

Interface Characterization ◽

Characterization Technique ◽

Thin Gate Oxide ◽

Oxide Damage

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Growth and scaling of oxide conduction after breakdown

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197781 ◽

2003 ◽

Cited By ~ 33

Author(s):

B.P. Linder ◽

J.H. Stathis ◽

D.J. Frank ◽

S. Lombardo ◽

A. Vayshenker

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Defect passivation and dark count in Geiger-mode avalanche photodiodes

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197818 ◽

2003 ◽

Cited By ~ 1

Author(s):

J.C. Jackson ◽

G. Healy ◽

A.-M. Kelleher ◽

J. Alderman ◽

J. Donnelly ◽

...

Keyword(s):

Avalanche Photodiodes ◽

Dark Count ◽

Defect Passivation ◽

Geiger Mode

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Leakage behavior and reliability assessment of tantalum oxide dielectric MIM capacitors

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197757 ◽

2003 ◽

Cited By ~ 26

Author(s):

T. Remmel ◽

R. Ramprasad ◽

J. Walls

Keyword(s):

Tantalum Oxide ◽

Reliability Assessment ◽

Mim Capacitors

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Challenges of testing high-volume, low-cost 8-bit microcontrollers

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197775 ◽

2003 ◽

Cited By ~ 1

Author(s):

M. Stout ◽

K. Tumin ◽

C. Vargas ◽

B. Gotchall

Keyword(s):

Low Cost ◽

High Volume

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Consistency of optical data from PICA

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197809 ◽

2003 ◽

Author(s):

T. Lundquist ◽

P. Le Coupanec ◽

A. Abraham ◽

W. Ng

Keyword(s):

Optical Data

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Stress polarity dependence of degradation and breakdown of SiO/sub 2//high-k stacks

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197715 ◽

2003 ◽

Cited By ~ 14

Author(s):

R. Degrave ◽

T. Kauerauf ◽

A. Kerber ◽

E. Cartier ◽

B. Govoreanu ◽

...

Keyword(s):

High K

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2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Effect of gate oxide breakdown on RF device and circuit performance

Evidence for hydrogen-related defects during NBTl stress in p-MOSFETs

Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND flash memory cells

An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devices

Growth and scaling of oxide conduction after breakdown

Defect passivation and dark count in Geiger-mode avalanche photodiodes

Leakage behavior and reliability assessment of tantalum oxide dielectric MIM capacitors

Challenges of testing high-volume, low-cost 8-bit microcontrollers

Consistency of optical data from PICA

Stress polarity dependence of degradation and breakdown of SiO/sub 2//high-k stacks

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
Latest Publications