An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devices

2003 ◽  
Author(s):  
S.-J. Chen ◽  
T.-C. Lin ◽  
D.-K. Lo ◽  
J.-J. Yang ◽  
S.S. Chung ◽  
...  
Keyword(s):  
Full Range ◽  
Gate Oxide ◽  
Interface Characterization ◽  
Characterization Technique ◽  
Thin Gate Oxide ◽  
Oxide Damage

Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs

2002 ◽  
Vol 12 (3) ◽  
pp. 57-60 ◽  
Author(s):  
B. Cretu ◽  
F. Balestra ◽  
G. Ghibaudo ◽  
G. Guégan
Keyword(s):  
Low Temperature ◽  
Gate Oxide ◽  
Thin Gate Oxide

Evaluation of Gate Oxide Damage Caused by Ionization Magnetron Sputtering

2007 ◽  
Vol 46 (11) ◽  
pp. 7465-7469
Author(s):  
Shigeki Matsunaka ◽  
Katsumi Iyanagi ◽  
Jota Fukuhara ◽  
Shuzi Hayase
Keyword(s):  
Magnetron Sputtering ◽  
Gate Oxide ◽  
Oxide Damage

Effect of total ionizing dose radiation on the 0.25 μm RF PDSOI nMOSFETs with thin gate oxide

2009 ◽  
Vol 30 (1) ◽  
pp. 014004 ◽  
Author(s):  
Liu Mengxin ◽  
Han Zhengsheng ◽  
Bi Jinshun ◽  
Fan Xuemei ◽  
Liu Gang ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Total Ionizing Dose ◽  
Thin Gate Oxide ◽  
Dose Radiation

Highly Stable Ir-Ta-O Electrode for Ferroelectric Material Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Fengyan Zhang ◽  
Sheng Teng Hsu ◽  
Jer-shen Maa ◽  
Yoshi Ono ◽  
Ying Hong ◽  
...  
Keyword(s):  
High Temperature ◽  
Bottom Electrode ◽  
Temperature Stability ◽  
Gate Oxide ◽  
Ferroelectric Material ◽  
High Temperature Stability ◽  
Material Deposition ◽  
Long Time ◽  
The Stability ◽  
Thin Gate Oxide

AbstractIr-Ta-O composite bottom electrode has extraordinary high temperature stability. It can maintain good conductivity and integrity even after 5min annealing at 1000 °C in oxygen ambient. The thermal stability of Ir-Ta-O on different substrates has been studied. It shows that Ir-Ta-O is also very stable on Si and SiO2 substrates. No hillock formation and peelings of the bottom electrode were observed after high temperature and long time annealing in O2 ambient. SEM, TEM, XRD, and AES have been used to characterize the Ir-Ta-O film and the interfaces between Ir-Ta-O bottom electrode and Si or SiO2 substrate. The composition and conductivity changes of the electrode during oxygen ambient annealing and the interdiffusion issue will be discussed. Furthermore, Ir-Ta-O/SiO2/Si capacitor with 30Å gate oxide was fabricated and the C-V and I-V characteristics were measured to confirm the stability of Ir-Ta-O on thin gate oxide.

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