Defect passivation and dark count in Geiger-mode avalanche photodiodes

Author(s):  
J.C. Jackson ◽  
G. Healy ◽  
A.-M. Kelleher ◽  
J. Alderman ◽  
J. Donnelly ◽  
...  
2017 ◽  
Vol 64 (11) ◽  
pp. 4532-4539 ◽  
Author(s):  
Sen Yang ◽  
Dong Zhou ◽  
Xiaolong Cai ◽  
Weizong Xu ◽  
Hai Lu ◽  
...  

2011 ◽  
Vol 9 (6) ◽  
pp. 2408-2411
Author(s):  
E. Vilella ◽  
A. Arbat ◽  
O. Alonso ◽  
A. Comerma ◽  
J. Trenado ◽  
...  

2009 ◽  
Vol 615-617 ◽  
pp. 877-880 ◽  
Author(s):  
Alexey V. Vert ◽  
Stanislav I. Soloviev ◽  
Jody Fronheiser ◽  
Peter M. Sandvik

4H-SiC single photon avalanche diodes are reported. A separate absorption and multiplication non-reach through device structure was optimized for operation in Geiger mode. An estimated dark current at a gain of 1000 was ranging between 0.4 pA (0.75 nA/cm2) and 20nA (38 A/cm2) on devices with an effective mesa diameter of 260 m. The electron beam induced current technique was used to image defects in the active region of studied devices. Increased reverse bias leakage current and increased Geiger mode dark count probability were correlated with the presence of large number of defects. Single photon detection efficiencies of up to 11% were measured at a wavelength of 266 nm in Geiger mode.


2002 ◽  
Vol 80 (22) ◽  
pp. 4100-4102 ◽  
Author(s):  
J. C. Jackson ◽  
P. K. Hurley ◽  
B. Lane ◽  
A. Mathewson ◽  
A. P. Morrison

2006 ◽  
Author(s):  
Ariane L. Beck ◽  
Xiangyi Guo ◽  
Han-Din Liu ◽  
Aruna Ghatak-roy ◽  
Joe C. Campbell

Author(s):  
J. C. Jackson ◽  
B. Lane ◽  
A. Mathewson ◽  
A. P. Morrison

2006 ◽  
Vol 88 (13) ◽  
pp. 133503 ◽  
Author(s):  
K. E. Jensen ◽  
P. I. Hopman ◽  
E. K. Duerr ◽  
E. A. Dauler ◽  
J. P. Donnelly ◽  
...  

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