The Temperature Dependence of Ion Beam Mixing of Zr on A12O3

1986 ◽  
Vol 82 ◽  
Author(s):  
G. C. Farlow ◽  
S. P. Withrow ◽  
D. S. Easton
Keyword(s):  
Ambient Temperature ◽  
Temperature Dependence ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Ion Beam Mixing ◽  
Deposited Film

ABSTRACTThree hundred angstrom Zr films were deposited on A12O3 substrates and irradiated with 300 keV Xe ions to a dose of 1 × 1016 /cm2. The irradiation was carried out at 77 K, 300 K (ambient temperature), and 800 K. Changes in the deposited film and the Zr-A12O3 interface were examined by comparing Rutherford backscattering spectra from irradiated and unirradiated regions of the samples. Ion beam induced reactions were observed at all three temperatures. The systematics of the temperature dependence of ion beam mixing are discussed.

scholarly journals Ion-Beam Mixing and Tribology of Fe/B Multilayers

1989 ◽  
Vol 157 ◽  
Author(s):  
Renyuan Hu ◽  
L. E. Rehn ◽  
G. R. Fenske ◽  
P. M. Baldo
Keyword(s):  
Electron Microscopy ◽  
Irradiation Dose ◽  
Activation Enthalpy ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Arrhenius Behavior ◽  
Ion Beam Mixing ◽  
Steel Substrates ◽  
M50 Steel

ABSTRACTInterdiffusion of Fe and B trilayer specimens during 1-MeV Kr+ bombardment was studied using Rutherford backscattering and electron microscopy. The square of the interdiffusion distance during mixing at 300°C was found to depend linearly on the irradiation dose. Arrhenius behavior with an apparent activation enthalpy of 0.7 eV was observed for the mixing between 200 and 500°C. Electron microscopy of ion-beam mixed multilayer specimens revealed that two crystalline compounds, Fe2B and Fe3B, formed during bombardment at 450°C, while two different amorphous Fe/B phases formed at 300°C. Substantially improved adhesion and reduced friction were observed for Fe/B multilayers ion-beam mixed onto M50 steel substrates at 450°C.

Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

1993 ◽  
Vol 63 (7) ◽  
pp. 976-978 ◽  
Author(s):  
J. L. Klatt ◽  
R. S. Averback ◽  
D. V. Forbes ◽  
J. J. Coleman
Keyword(s):  
Temperature Dependence ◽  
Ion Beam ◽  
Ion Beam Mixing

High-energy (MeV) ion-beam mixing of Ti with SiC and Si3N4

1987 ◽  
Vol 2 (2) ◽  
pp. 211-215 ◽  
Author(s):  
R. S. Bhattacharya ◽  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Enthalpy Of Mixing ◽  
High Energy ◽  
Rutherford Backscattering ◽  
Ion Beam Mixing ◽  
Metal Insulator ◽  
Transmission Electron

Ion-beam mixing of Ti layers with sintered α-SiC and hot-pressed Si3N4 was measured for 1 McV Au+ at doses of 1X1016 cm−2 and 5X1016 cm−2. Rutherford backscattering (RBS) and cross-section transmission electron microscopy (XTEM) were used to evaluate the mixing. Mixing was observed in Ti/SiC system; however, there was no mixing in Ti/Si3N4 system. Results are discussed in light of the enthalpy of mixing criterion for metal-insulator systems.

Anisotropic Damage Production at ION Irradiated GaAs/AlAs Interfaces

1991 ◽  
Vol 235 ◽  
Author(s):  
J. L. Klatt ◽  
J. Alwan ◽  
J. J. Coleman ◽  
R. S. Averback
Keyword(s):  
Ion Beam ◽  
Damage Zone ◽  
Rutherford Backscattering ◽  
The Other ◽  
Anisotropic Damage ◽  
Ion Beam Mixing ◽  
Alas Layer ◽  
Metallic Systems

ABSTRACTIon beam mixing and damage production at GaAs-AlAs interfaces was studied by Rutherford backscattering and channeling methods. It was observed that the general features of the intermixing of GaAs with AlAs at 100K are typical of that in other semiconductor and metallic systems but that the damage production is not. The GaAs layers amorphize at a very low ion dose whereas the AlAs layers are very resistant to amorphization. Damage in the AlAs begins at one interface of the GaAs and grows through the AlAs layer, but damage at the other interface never nucleates. The ratio of nuclear to electronic stopping influences the growth of the damage zone.

scholarly journals Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

2014 ◽  
Vol 115 (2) ◽  
pp. 023506 ◽  
Author(s):  
M. Radek ◽  
H. Bracht ◽  
M. Posselt ◽  
B. Liedke ◽  
B. Schmidt ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Ion Beam ◽  
Multilayer Structures ◽  
Ion Beam Mixing ◽  
Amorphous Germanium

Thermodynamic Constraints on Ion Beam Mixing of Metals on Insulators

1985 ◽  
Vol 45 ◽  
Author(s):  
G. C. Farlow ◽  
B. R. Appleton ◽  
L. A. Boatner ◽  
C. J. Mchargue ◽  
C. W. White ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Beam ◽  
Metal Films ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Reaction Enthalpy ◽  
Ion Beam Mixing ◽  
Interfacial Mixing ◽  
Scanning Electron

ABSTRACTSeveral different insulating substrates were coated with various metal films and ion beam irradiated using either Xe or Kr ions. These were then examined by Rutherford backscattering spectroscopy and scanning electron microscopy to determine if interfacial mixing had taken place. These results were compared with the sign of the reaction enthalpy of the metal and substrate to test the proposition that metals mix on insulators if the reaction enthalpy is negative and do not mix if it is positive. The enthalpy rule is in general valid. Two exceptions were found: Cr on Si02 and Zr on Al203; however, these exceptions contain ambiguous features.Irradiation with a light, reactive ion was found to produce no mixing.

Temperature dependence of ion‐beam mixing in III–V semiconductors

1995 ◽  
Vol 77 (7) ◽  
pp. 3543-3545 ◽  
Author(s):  
D. V. Forbes ◽  
J. J. Coleman ◽  
J. L. Klatt ◽  
R. S. Averback
Keyword(s):  
Temperature Dependence ◽  
Ion Beam ◽  
Ion Beam Mixing
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