Anisotropic Damage Production at ION Irradiated GaAs/AlAs Interfaces

1991 ◽  
Vol 235 ◽  
Author(s):  
J. L. Klatt ◽  
J. Alwan ◽  
J. J. Coleman ◽  
R. S. Averback
Keyword(s):  
Ion Beam ◽  
Damage Zone ◽  
Rutherford Backscattering ◽  
The Other ◽  
Anisotropic Damage ◽  
Ion Beam Mixing ◽  
Alas Layer ◽  
Metallic Systems

ABSTRACTIon beam mixing and damage production at GaAs-AlAs interfaces was studied by Rutherford backscattering and channeling methods. It was observed that the general features of the intermixing of GaAs with AlAs at 100K are typical of that in other semiconductor and metallic systems but that the damage production is not. The GaAs layers amorphize at a very low ion dose whereas the AlAs layers are very resistant to amorphization. Damage in the AlAs begins at one interface of the GaAs and grows through the AlAs layer, but damage at the other interface never nucleates. The ratio of nuclear to electronic stopping influences the growth of the damage zone.

scholarly journals Ion-Beam Mixing and Tribology of Fe/B Multilayers

1989 ◽  
Vol 157 ◽  
Author(s):  
Renyuan Hu ◽  
L. E. Rehn ◽  
G. R. Fenske ◽  
P. M. Baldo
Keyword(s):  
Electron Microscopy ◽  
Irradiation Dose ◽  
Activation Enthalpy ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Arrhenius Behavior ◽  
Ion Beam Mixing ◽  
Steel Substrates ◽  
M50 Steel

ABSTRACTInterdiffusion of Fe and B trilayer specimens during 1-MeV Kr+ bombardment was studied using Rutherford backscattering and electron microscopy. The square of the interdiffusion distance during mixing at 300°C was found to depend linearly on the irradiation dose. Arrhenius behavior with an apparent activation enthalpy of 0.7 eV was observed for the mixing between 200 and 500°C. Electron microscopy of ion-beam mixed multilayer specimens revealed that two crystalline compounds, Fe2B and Fe3B, formed during bombardment at 450°C, while two different amorphous Fe/B phases formed at 300°C. Substantially improved adhesion and reduced friction were observed for Fe/B multilayers ion-beam mixed onto M50 steel substrates at 450°C.

High-energy (MeV) ion-beam mixing of Ti with SiC and Si3N4

1987 ◽  
Vol 2 (2) ◽  
pp. 211-215 ◽  
Author(s):  
R. S. Bhattacharya ◽  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Enthalpy Of Mixing ◽  
High Energy ◽  
Rutherford Backscattering ◽  
Ion Beam Mixing ◽  
Metal Insulator ◽  
Transmission Electron

Ion-beam mixing of Ti layers with sintered α-SiC and hot-pressed Si3N4 was measured for 1 McV Au+ at doses of 1X1016 cm−2 and 5X1016 cm−2. Rutherford backscattering (RBS) and cross-section transmission electron microscopy (XTEM) were used to evaluate the mixing. Mixing was observed in Ti/SiC system; however, there was no mixing in Ti/Si3N4 system. Results are discussed in light of the enthalpy of mixing criterion for metal-insulator systems.

Amorphization of metallic systems induced by low-temperature ion-beam mixing

1994 ◽  
Vol 50 (5) ◽  
pp. 2815-2826 ◽  
Author(s):  
J. Jagielski ◽  
L. Thomé ◽  
T. Benkoulal
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Metallic Systems

Thermodynamic Constraints on Ion Beam Mixing of Metals on Insulators

1985 ◽  
Vol 45 ◽  
Author(s):  
G. C. Farlow ◽  
B. R. Appleton ◽  
L. A. Boatner ◽  
C. J. Mchargue ◽  
C. W. White ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Beam ◽  
Metal Films ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Reaction Enthalpy ◽  
Ion Beam Mixing ◽  
Interfacial Mixing ◽  
Scanning Electron

ABSTRACTSeveral different insulating substrates were coated with various metal films and ion beam irradiated using either Xe or Kr ions. These were then examined by Rutherford backscattering spectroscopy and scanning electron microscopy to determine if interfacial mixing had taken place. These results were compared with the sign of the reaction enthalpy of the metal and substrate to test the proposition that metals mix on insulators if the reaction enthalpy is negative and do not mix if it is positive. The enthalpy rule is in general valid. Two exceptions were found: Cr on Si02 and Zr on Al203; however, these exceptions contain ambiguous features.Irradiation with a light, reactive ion was found to produce no mixing.

Interface Resolution in Auger Depth Profiling

1986 ◽  
Vol 69 ◽  
Author(s):  
D. Coulman ◽  
A. Turner
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Negligible Effect ◽  
The Other ◽  
Angle Of Incidence ◽  
Ion Beam Mixing ◽  
Sample Rotation ◽  
Preferential Sputtering ◽  
Cone Formation ◽  
Minor Improvement

AbstractIt has been well established that sputtering artifacts such as ion beam mixing, preferential sputtering and cone formation ultimately limit interface resolution in Auger and ESCA depth profiling. We have conducted a comparision of the effect of sample rotation, and of the angle of incidence of the ion beam using one and two ion guns on interface resolution. Our investigation has concentrated on the interface resolution and detection of impurities at the various interfaces of a typical semiconductor metallization scheme [Al 700 nm/ TiW 100 nm/ Si02 100 nm/Si]. We have determined that in going from a standard sputtering geometry of a 67 degree tilt from the surface normal to 80 degrees one obtains a factor of five improvement in interface resolution. Sample rotation, on the other hand, was found to improve interface resolution by a factor of two at 67 degrees and to result in minor improvement at 80 degrees. The effect of two ion guns was found to have a negligible effect on the samples studied.

Temperature Effects in Ion Beam Mixing of Oxide-Oxide Interfaces

1991 ◽  
Vol 235 ◽  
Author(s):  
D. L. Joslin ◽  
L. J. Romana ◽  
C. W. White ◽  
C. J. McHargue ◽  
P. A. Thévenard ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Temperature Effects ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Rutherford Backscattering ◽  
Ion Beam Mixing ◽  
Oxide Interfaces ◽  
Sapphire Substrates ◽  
Thin Oxide Films ◽  
Rf Sputter Deposition

ABSTRACTIon beam mixing of thin oxide films, Cr2O3 and ZiO2, on sapphire substrates has been studied. The systems were chosen according to their solubilities in α-Al2O3: Cr2O3 is completely soluble, while ZrO2 is insoluble. Mixing experiments were performed on 50 nm-thick Cr2O3 and ZrO2 films deposited on αAl2O3 by radio frequency (rf) sputter deposition. The specimens were bombarded with Cr+ at an energy of 160 keV to a fluence of 4×1016 ions-cm−2. Implantations were performed at 25 and 860°C. Rutherford backscattering spectroscopy was performed to analyze any interface modifications due to the bombardment. No detectable mixing was observed in either system for irradiations performed at 25°C, but a small amount of ballistic mixing was observed in both systems at 860°C.

The Temperature Dependence of Ion Beam Mixing of Zr on A12O3

1986 ◽  
Vol 82 ◽  
Author(s):  
G. C. Farlow ◽  
S. P. Withrow ◽  
D. S. Easton
Keyword(s):  
Ambient Temperature ◽  
Temperature Dependence ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Ion Beam Mixing ◽  
Deposited Film

ABSTRACTThree hundred angstrom Zr films were deposited on A12O3 substrates and irradiated with 300 keV Xe ions to a dose of 1 × 1016 /cm2. The irradiation was carried out at 77 K, 300 K (ambient temperature), and 800 K. Changes in the deposited film and the Zr-A12O3 interface were examined by comparing Rutherford backscattering spectra from irradiated and unirradiated regions of the samples. Ion beam induced reactions were observed at all three temperatures. The systematics of the temperature dependence of ion beam mixing are discussed.

Ion beam mixing study on Cu/Al2O3 bilayer samples using Rutherford backscattering spectrometry

1994 ◽  
Vol 9 (2) ◽  
pp. 406-409 ◽  
Author(s):  
A.G. Balogh ◽  
M-P. Macht ◽  
V. Naundorf
Keyword(s):  
Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Mixing Efficiency ◽  
Fusion Reactors ◽  
Ion Beam Mixing ◽  
Depth Profiles ◽  
Cu Alloys ◽  
Concentration Depth Profiles

Cu/Al2O3 bilayer samples were produced by vapor deposition and irradiated successively with 150 keV Ar ions up to a dose of 500 dpa. Ion beam mixing effects were studied by 2 Me V He+ Rutherford backscattering spectroscopy (RBS). Concentration depth profiles show the mixing of Cu, Al, and O atoms in the sample. Because of the low mixing efficiency found in this study, Al2O3-dispersion strengthened Cu alloys seem to be good candidates as structural materials in fusion reactors.

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