scholarly journals Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

2014 ◽  
Vol 115 (2) ◽  
pp. 023506 ◽  
Author(s):  
M. Radek ◽  
H. Bracht ◽  
M. Posselt ◽  
B. Liedke ◽  
B. Schmidt ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Ion Beam ◽  
Multilayer Structures ◽  
Ion Beam Mixing ◽  
Amorphous Germanium

Nanoscale SiC production by ballistic ion beam mixing of C/Si multilayer structures

2016 ◽  
Vol 49 (18) ◽  
pp. 185303 ◽  
Author(s):  
G Battistig ◽  
Z Zolnai ◽  
A Németh ◽  
P Panjan ◽  
M Menyhárd
Keyword(s):  
Ion Beam ◽  
Multilayer Structures ◽  
Ion Beam Mixing

Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

1993 ◽  
Vol 63 (7) ◽  
pp. 976-978 ◽  
Author(s):  
J. L. Klatt ◽  
R. S. Averback ◽  
D. V. Forbes ◽  
J. J. Coleman
Keyword(s):  
Temperature Dependence ◽  
Ion Beam ◽  
Ion Beam Mixing

Temperature dependence of ion‐beam mixing in III–V semiconductors

1995 ◽  
Vol 77 (7) ◽  
pp. 3543-3545 ◽  
Author(s):  
D. V. Forbes ◽  
J. J. Coleman ◽  
J. L. Klatt ◽  
R. S. Averback
Keyword(s):  
Temperature Dependence ◽  
Ion Beam ◽  
Ion Beam Mixing

Temperature Dependence of Ion Beam Mixing of Ingaas Marker Layers in GaAs

1993 ◽  
Vol 311 ◽  
Author(s):  
D.D. Forbes ◽  
J.J. Coleman ◽  
J.J. Klatt ◽  
R.R. Averback
Keyword(s):  
Temperature Dependence ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Gaas Matrix ◽  
Similar Temperature Dependence ◽  
Mixing Parameter ◽  
Similar Temperature ◽  
Secondary Ion

ABSTRACTIon beam mixing of In0.20Ga0.80As quantum well marker layers in GaAs following 1 MeV Kr ion irradiation has been measured as a function of irradiation temperature and fluence. Secondary Ion Mass Spectrometry (SIMS) was used to measure the diffusion of the In0.20Ga0.80As layer following irradiation at various temperatures. Rutherford Backscattering (RBS) and channeling methods were used to determine the extent of the amorphization as a result of the implantation. The mixing parameter of the In0.20Ga0.80As in the GaAs matrix increased from σ120 Å5/eV at 77K to σ160Å5/eV in the temperature range of 300K–450K, but decreased somewhat at 573K. This behavior of In0.20Ga0.80As marker layers will be compared to AlAs marker layers which show similar temperature dependence. These results are interpreted on the basis of thermal spikes and crystal structure.

scholarly journals Ion-beam mixing in crystalline and amorphous germanium isotope multilayers

2011 ◽  
Vol 110 (9) ◽  
pp. 093502 ◽  
Author(s):  
H. Bracht ◽  
M. Radek ◽  
R. Kube ◽  
S. Knebel ◽  
M. Posselt ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
Amorphous Germanium

The Temperature Dependence of Ion Beam Mixing of Zr on A12O3

1986 ◽  
Vol 82 ◽  
Author(s):  
G. C. Farlow ◽  
S. P. Withrow ◽  
D. S. Easton
Keyword(s):  
Ambient Temperature ◽  
Temperature Dependence ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Ion Beam Mixing ◽  
Deposited Film

ABSTRACTThree hundred angstrom Zr films were deposited on A12O3 substrates and irradiated with 300 keV Xe ions to a dose of 1 × 1016 /cm2. The irradiation was carried out at 77 K, 300 K (ambient temperature), and 800 K. Changes in the deposited film and the Zr-A12O3 interface were examined by comparing Rutherford backscattering spectra from irradiated and unirradiated regions of the samples. Ion beam induced reactions were observed at all three temperatures. The systematics of the temperature dependence of ion beam mixing are discussed.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

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