scholarly journals Ion-Beam Mixing and Tribology of Fe/B Multilayers

1989 ◽  
Vol 157 ◽  
Author(s):  
Renyuan Hu ◽  
L. E. Rehn ◽  
G. R. Fenske ◽  
P. M. Baldo
Keyword(s):  
Electron Microscopy ◽  
Irradiation Dose ◽  
Activation Enthalpy ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Arrhenius Behavior ◽  
Ion Beam Mixing ◽  
Steel Substrates ◽  
M50 Steel

ABSTRACTInterdiffusion of Fe and B trilayer specimens during 1-MeV Kr+ bombardment was studied using Rutherford backscattering and electron microscopy. The square of the interdiffusion distance during mixing at 300°C was found to depend linearly on the irradiation dose. Arrhenius behavior with an apparent activation enthalpy of 0.7 eV was observed for the mixing between 200 and 500°C. Electron microscopy of ion-beam mixed multilayer specimens revealed that two crystalline compounds, Fe2B and Fe3B, formed during bombardment at 450°C, while two different amorphous Fe/B phases formed at 300°C. Substantially improved adhesion and reduced friction were observed for Fe/B multilayers ion-beam mixed onto M50 steel substrates at 450°C.

High-energy (MeV) ion-beam mixing of Ti with SiC and Si3N4

1987 ◽  
Vol 2 (2) ◽  
pp. 211-215 ◽  
Author(s):  
R. S. Bhattacharya ◽  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Enthalpy Of Mixing ◽  
High Energy ◽  
Rutherford Backscattering ◽  
Ion Beam Mixing ◽  
Metal Insulator ◽  
Transmission Electron

Ion-beam mixing of Ti layers with sintered α-SiC and hot-pressed Si3N4 was measured for 1 McV Au+ at doses of 1X1016 cm−2 and 5X1016 cm−2. Rutherford backscattering (RBS) and cross-section transmission electron microscopy (XTEM) were used to evaluate the mixing. Mixing was observed in Ti/SiC system; however, there was no mixing in Ti/Si3N4 system. Results are discussed in light of the enthalpy of mixing criterion for metal-insulator systems.

Thermodynamic Constraints on Ion Beam Mixing of Metals on Insulators

1985 ◽  
Vol 45 ◽  
Author(s):  
G. C. Farlow ◽  
B. R. Appleton ◽  
L. A. Boatner ◽  
C. J. Mchargue ◽  
C. W. White ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Beam ◽  
Metal Films ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Reaction Enthalpy ◽  
Ion Beam Mixing ◽  
Interfacial Mixing ◽  
Scanning Electron

ABSTRACTSeveral different insulating substrates were coated with various metal films and ion beam irradiated using either Xe or Kr ions. These were then examined by Rutherford backscattering spectroscopy and scanning electron microscopy to determine if interfacial mixing had taken place. These results were compared with the sign of the reaction enthalpy of the metal and substrate to test the proposition that metals mix on insulators if the reaction enthalpy is negative and do not mix if it is positive. The enthalpy rule is in general valid. Two exceptions were found: Cr on Si02 and Zr on Al203; however, these exceptions contain ambiguous features.Irradiation with a light, reactive ion was found to produce no mixing.

Pulsed Laser And Ion Beam Surface Modification of Sintered, Alpha-Sic

1985 ◽  
Vol 51 ◽  
Author(s):  
K. L. More ◽  
R. F. Davis ◽  
B. R. Appleton ◽  
D. Lowndes ◽  
P. Smith
Keyword(s):  
Electron Microscopy ◽  
Surface Modification ◽  
Laser Annealing ◽  
Ion Beam ◽  
Pulsed Laser ◽  
High Energy ◽  
Strength Increase ◽  
Ion Beam Mixing ◽  
Krf Excimer Laser ◽  
Surface Modification Techniques

ABSTRACTPulsed laser annealing and ion beam mixing have been used as surface modification techniques to enhance the physical properties of polycrystalline α-SiC. Thin Ni overlayers (20 nm - 100 nm) were evaporated onto the SiC surface. The specimens were subsequently irradiated with pulses of a ruby or krypton fluoride (KrF) excimer laser or bombarded with high energy Xe+ or Si+ ions. Both processes are non-equilibrium methods and each has been shown to induce unique microstructural changes at the SiC surface which are not attainable by conventional thermal treatments. Under particular (and optimum) processing conditions, these changes considerably increased the mechanical properties of the SiC; following laser irradiation, the fracture strength of the SiC was increased by as much as 50%, but after ion beam mixing, no strength increase was observed.High resolution cross-section transmission electron microscopy (X-TEM), scanning electron microscopy (SEM), and Rutherford backscattering techniques were used to characterize the extent of mixing between the Ni and the SiC as a result of the surface modification.

Instability of Nanocavities in Disordered and Amorphous Silicon Under Ion Irradiation

1998 ◽  
Vol 540 ◽  
Author(s):  
X. Zhu ◽  
J.S. Williams ◽  
J.C. McCallum
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Amorphous Silicon ◽  
Irradiation Dose ◽  
Crystalline Silicon ◽  
Ion Irradiation ◽  
Rutherford Backscattering ◽  
Cross Sectional ◽  
Open Volume ◽  
Transmission Electron

AbstractIt has recently been shown that a band of nanocavities in crystalline silicon is eliminated during amorphization of the silicon surrounding this band [4]. In this study, we examine the effect of irradiation dose on nanocavity stability. Gettering of Au is used as a detector for open volume defects following annealing of irradiated samples. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy have been used to analyse the samples. Cavities are only completely removed when the region surrounding the cavities is totally amorphized up to the surface. Partial amorphization leaves residual open volume defects.

Anisotropic Damage Production at ION Irradiated GaAs/AlAs Interfaces

1991 ◽  
Vol 235 ◽  
Author(s):  
J. L. Klatt ◽  
J. Alwan ◽  
J. J. Coleman ◽  
R. S. Averback
Keyword(s):  
Ion Beam ◽  
Damage Zone ◽  
Rutherford Backscattering ◽  
The Other ◽  
Anisotropic Damage ◽  
Ion Beam Mixing ◽  
Alas Layer ◽  
Metallic Systems

ABSTRACTIon beam mixing and damage production at GaAs-AlAs interfaces was studied by Rutherford backscattering and channeling methods. It was observed that the general features of the intermixing of GaAs with AlAs at 100K are typical of that in other semiconductor and metallic systems but that the damage production is not. The GaAs layers amorphize at a very low ion dose whereas the AlAs layers are very resistant to amorphization. Damage in the AlAs begins at one interface of the GaAs and grows through the AlAs layer, but damage at the other interface never nucleates. The ratio of nuclear to electronic stopping influences the growth of the damage zone.

Phase Transformations in Co/Nb and Co/Zr Multilayer Film Stacks.

1991 ◽  
Vol 230 ◽  
Author(s):  
J. C. Lin ◽  
R. A. Hoffman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transformations ◽  
Multilayer Film ◽  
Isothermal Annealing ◽  
Ion Beam ◽  
Equilibrium Phase ◽  
Stable Configuration ◽  
Ion Beam Mixing ◽  
Transmission Electron

AbstractIon-beam mixing and isothermal annealing techniques were applied to induce phase transformations in Co/Nb and Co/Zr multilayer film stacks. Transmission electron microscopy(TEM) and x-ray diffraction(XRD) were used to characterize the microstructure of the films. Interfacial morphology and chemistry of the films were examined by Rutherford backscattering spectrometry(RBS) and cross-section transmission electron microscopy(XTEM). The formation of amorphous phases was found in both systems by either technique. A comparison of the phase transformation mechanisms induced by ion-beam mixing and isothermal annealing is given. The thermodynamic and kinetic factors controlling the phase formation and stability are discussed. For the isothermal annealing, the final stable configuration is predicted by equilibrium phase diagrams.

Altering the Oxidation Resistance of Iron Via ion Beam Alloying

1994 ◽  
Vol 373 ◽  
Author(s):  
Ivan H. Murzin ◽  
Donald I. Potter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Deposition ◽  
Rate Constants ◽  
Oxidation Behavior ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Oxidation Rates ◽  
Parabolic Kinetics ◽  
Transmission Electron

AbstractFe-Cr, Fe-Y and Fe-Cr-Y surface alloys were produced by direct ion implantation, ion beam mixing, and combinations of implantation and vapor deposition. The influence of these treatments on the oxidation behavior of iron was investigated in 1 atm. of oxygen at 520°C. The oxidation rates were less in all the ion beam alloyed iron samples than in untreated iron. The oxidation follows parabolic kinetics in most cases, with the rate constants, Kp, in the range (3-8)×10−6 mg2cm−4 sec−l versus 2.2×10−5 mg2 cm−4 sec−1 for untreated iron. Yttrium fluences between 5×1014 and 5×lO15 cm−2 did not alter the microstructures of iron significantly. However, fluences of 1×1016, 3×1016, 5x1016 and 1x1017 cm−2 caused the crystalline structure of iron to be replaced by an amorphous phase. The presence of this phase was demonstrated with selected area channeling patterns and transmission electron microscopy.

Ion-Beam Mixing and Amorphization in Au/Zr Bilayers

1988 ◽  
Vol 100 ◽  
Author(s):  
Fu-Rong Ding ◽  
P. R. Okamoto ◽  
L. E. Rehn
Keyword(s):  
Electron Microscope ◽  
Ion Beam ◽  
Low Energy ◽  
Inert Gas ◽  
Arrhenius Behavior ◽  
Ion Beam Mixing ◽  
Bilayer Films ◽  
Voltage Electron ◽  
High Voltage Electron Microscope

ABSTRACTAu/Zr bilayer films with inert-gas markers were produced by low energy (< 4 keV) implantation. Mass transport was measured during ion-beam mixing with 1 MeV Kr at several temperatures between 330 and 540K. Two distinct regimes of apparent Arrhenius behavior were found with activation enthalpies of 0.06 and 0.9 eV in the temperature range 330–440K and 460–540K, respectively. Microstructural changes during ion-beam mixing were studied in situ, in a high voltage electron microscope. Heterogeneous nucleation of an amorphous phase was observed during mixing. The results are compared with similar studies reported previously in Ni/Zr bilayer specimens.

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