Effects of defects and surface roughness on the vortex penetration and vortex dynamics in superconductor-insulator-superconductor multilayer structures exposed to RF magnetic fields: numerical simulations within TDGL theory

The vortex penetration and vortex dynamics are significantly important to superconducting devices, for example the superconducting cavities, since the vortex motions would create substantial dissipation. In experiments, different kinds of defects, as well as different degrees of surface roughness were observed. By considering these in superconductor-insulator-superconductor (SIS) structures, the vortex penetration and vortex dynamics are very complex due to the interactions with defects and the influence of surface roughness, especially for radio-frequency (RF) magnetic field, which are quite different from ideal defect-free SIS multilayer structures. In this paper, within Ginzburg-Landau theory, we perform numerical simulations to study the effects of nanoscale defects, surface roughness, and cracks in the coating layer on the vortex penetration and superheating field in Nb3Sn-I-Nb multilayer structures exposed to a quasi-static magnetic field. The validations of the numerical simulations are verified by good consistency with previous theoretical results in ideal defect-free SIS multilayer and single Nb structures. Furthermore, we explore the vortex dynamics and induced voltages in SIS multilayer structures exposed to RF magnetic fields for both ideal defect-free structures and real situations including surface roughness. Our numerical simulations indicate that, unlike the quasi-static case, the advantage of SIS multilayer structures over a single Nb structure depends on the degrees of surface roughness as well as the frequency and amplitude of the RF magnetic field. The results of this paper provide deep insight to evaluate the actual performance-limiting of next-generation superconducting radio-frequency (SRF) cavities with different proposed candidate materials, which are quite susceptible to nonideal surface.

Reliable cell retention of mammalian suspension cells in microfluidic cultivation chambers

We present a new microfluidic trapping concept to retain randomly moving suspension cells inside a cultivation chamber. In comparison to previously published complex multilayer structures, we achieve cell retention by a thin PDMS barrier, which can be easily integrated into various PDMS-based cultivation devices. Cell loss during cultivation is effectively prevented while diffusive media supply is still ensured.

Carrier dynamics in two-dimensional perovskites: Dion-Jacobson vs. Ruddlesden-Popper thin films

Quasi-two dimensional perovskites have emerged as candidates of high-performance materials for various optoelectronic applications due to the unique excitonic properties in their multilayer structures. Both Dion–Jacobson perovskites and Ruddlesden-Popper phases...

Сравнительное исследование термостойкости пелликлов на основе бериллия

We demonstrate the possibility of manufacturing Be-based ultrathin films with high transmission at wavelengths of 11.4 and 13.5 nm. For free-standing films of Be and Be-based multilayer structures (Si/Be, ZrSi2/Be, Be/BexNy, Zr/Be, Ru/Be, Mo/Be), we determine the thresholds of the absorbed power at which over a short period (tens of minutes) of vacuum annealing, initially sagging free-standing films became visibly stretched over the hole. Of the film structures tested here, the Be/BexNy structure (with beryllium nitride interlayers) showed the highest threshold for the absorbed power (1 W/cm2). However, due to the low strength of this structure, ZrSi2/Be, Mo/Be, and Be films seem to be more promising for the manufacture of a full-size pellicle. Long-term vacuum annealing of Mo/Be and Be ultrathin films showed that they could withstand 24 hours of vacuum heating at an absorbed power density of 0.2 W/cm2 (film temperature ~250°C) without noticeable changes in EUV transmission or sagging of films. With comparable transmission (~83% at 13.5 nm and ~88% at 11.4 nm), a multilayer Mo/Be structure with a thickness of 30 nm appears to be preferable, as it shows less brittleness than a monolayer Be film with a thickness of 50 nm.

Microstructure and phonon behavior in W/Si periodic multilayer structures

The crystallinity of the tungsten (W) phase was improved with an increase in the thickness of this layer in the periodic W/Si multilayer structure. Both the α- and β- W phases were grown simultaneously and the contribution of these phases has modified upon a change in the thickness of the W layers. For thinner W layers, the thermodynamically metastable β- W phase was dominated, and with an increase in thickness, this phase has suppressed, and the stable α- W phase became prominent. The crystallite size of these phases was almost linearly proportional to the thickness of the W layers in the multilayers. With the increase in thickness of Si layers in multilayers, Raman scattering showed a decrease in bond-angle deviation of Si-Si bonding in the amorphous Si phase. The study revealed, ordering of Si-Si bonding in the amorphous phase of Si with an increase in thickness of these layers in periodic W/Si multilayers.

Photodetector devices based on PIN and barrier structures of the mid-wave IR range of the spectrum

Multilayer structures based on the antimonide group materials with absorber layers InSb or AlxIn1-XSb, and XBn-structures with AlxIn1-XSb barrier layer (InSb/AlxIn1-XSb/InSb), designed for the manufacture of advanced photosensitive devices detecting radiation in the medium-wave infrared (IR) range (MWIR), have been developed and investigated. Various topology photosensitive elements (PSE) with absorbing layers InSb or AlxIn1-XSb were fabricated on the basis of MBE-grown p–i–n and barrier structures. It is shown that wideband ternary al-loys AlxIn1-XSb are considered as an alternative to the narrowband binary compound InSb, since, due to wide-band material properties, photodiodes based on AlxIn1-XSb have lower dark currents, and, consequently, noise. The average values of detectivity D* and noise-equivalent temperature difference (NETD) have been measured for various topology photodetectors, so D* was more than 1011 cmW-1Hz1/2 in p–i–n-structures, and D* exceed of 1012 cmW-1Hz1/2 in barrier structures.