Low-Dielectric-Constant Interlayer Insulation for Multilevel Metallization

1992 ◽  
Vol 284 ◽  
Author(s):  
Masahiko Maeda
Keyword(s):  
Dielectric Constant ◽  
Breakdown Strength ◽  
Atomic Ratio ◽  
Film Structure ◽  
Low Dielectric Constant ◽  
Rf Plasma ◽  
Film Properties ◽  
Ecr Plasma ◽  
Low Dielectric ◽  
The Relationship

ABSTRACTSiBN ternary and SiOBN quaternary films prepared by rf-plasma and/or ECR-plasma CVD have been proposed, and this paper evaluates the relationship between film structure and dielectric constant as well as the other film properties. The SiBN films contain Si-N and B-N bonds, and the dielectric constant of the SiBN films reduces with increasing proportion of B-N bonds in the films. The SiBN films are less hygroscopic than BN films and they are therefore more stable. For the SiOBN films, the effects of oxygen doping on the dielectric constant and on breakdown strength are discussed in terms of the film composition and bonding configuration. The dielectric constant decreases with increasing oxygen atomic ratio and reaches a minimum when the amount of oxygen is equal to the amount of silicon. The effectiveness of this low-dielectric-constant material as an interlay-er is confirmed in actual VLSIs with planarized two-level metallization using the SiBN interlayer.

Deposition and Characterization of PECVD SiOC Films by Using Bistrimethylsilylmethane (BTMSM) Precursor

2001 ◽  
Vol 714 ◽  
Author(s):  
Yoon-Hae Kim ◽  
Moo Sung Hwang ◽  
Young Lee ◽  
Hyeong Joon Kim
Keyword(s):  
Dielectric Constant ◽  
Etch Rate ◽  
Silicon Oxide ◽  
Hydrogen Plasma ◽  
Low Dielectric Constant ◽  
Film Properties ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Process Compatibility

ABSTRACTCarbon-containing silicon oxide (SiOC) is regarded as a potential low dielectric constant (low-κ) material for an interlayer dielectric (ILD) in next generation interconnection. In this study, we present the fundamental film properties and integration process compatibility of the low-κ SiOC film deposited by using bistrimethylsilylmethane (BTMSM) precursor. As more carbon was incorporated into film, both film density and dielectric constant decreased. The lowest κ-value, which we have obtained in this study, was 2.3 and the hardness of SiOC film was 1.1GPa as well as showing the thermal stability up to 500°C. In case of using conventional gases, organic components in SiOC film restricted etch rate. However, O2 addition could make it possible to obtaine a reasonable etch rate. The post-treatment of SiOC film in hydrogen plasma improved the resistance to O2 plasma in ashing process. The compatibility of SiOC film to the CMP process was also examined.

High Strength Low Dielectric Constant Aromatic Thermosets

2005 ◽  
Vol 863 ◽  
Author(s):  
Yongqing Huang ◽  
James Economy
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Young’S Modulus ◽  
Breakdown Strength ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
High Strength ◽  
Low Dielectric Constant ◽  
Crosstalk Noise ◽  
Low Dielectric

AbstractContinuing miniaturization of microelectronic devices requires development of low dielectric constant materials to lower the RC delay, power dissipation and crosstalk noise. Although spin-on polymer dielectrics usually have better potential for extendibility to lower dielectric constant (k) values compared to chemical-vapor-deposited dielectrics, their low mechanical properties prevent them from being successfully integrated with copper metal lines.Recent evaluation of a new thermosetting oligomer shows high thermal stability, low moisture pick-up and low dielectric constant. Techniques to optimize the solubility and spin coating characteristics of the oligomer have been developed. The thermally cured polymer displayed a thermal stability up to 480°C in nitrogen and 400°C in air. The cured polymer displayed a dielectric constant of 2.7 at 1 MHz and a breakdown strength larger than 230 V/μm. Nanoindentation testing showed that it had an extraordinarily high Young's modulus of 16.8 GPa and a hardness of 3.5 GPa. By use of porogens, a dielectric constant as low as 1.85 was obtained while still maintaining an acceptable high Young's modulus of 7.7 GPa and hardness of 2.0 GPa. Nanoscratch testing indicated that this material had good adhesion to the Si substrate, and Ta which is a diffusion barrier for copper. These results appear unique compared to all commercially available low-k candidates.

Understanding the Impact of Porosity and Pore Structure in Ultra Low Dielectric Constant Organosilicate Glasses

2012 ◽  
Vol 1428 ◽  
Author(s):  
Irene J. Hsu ◽  
Raymond N. Vrtis ◽  
Jennifer E. Al-Rashid ◽  
Anupama Mallikarjunan ◽  
Kathleen E. Theodorou ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Mechanical Strength ◽  
Pore Structure ◽  
Pore Size Distribution ◽  
Low Dielectric Constant ◽  
Film Properties ◽  
Low Dielectric ◽  
The Impact ◽  
Organosilicate Glasses ◽  
Highly Porous

ABSTRACTRecently there have been a number of reports indicating concern relating to the effect of porosity, pore size distribution, and pore interconnectivity on the integration of highly porous ultra low-k organosilicate glasses (OSGs) as back-end-of-line (BEOL) interconnect dielectrics. In an effort to address these concerns a number of options to control the skeleton and pore structure of OSGs have been proposed, from adding alternative OSG precursors to alternative porogen precursors. In all these options there is a need to balance pore structure modification with critical film properties such as dielectric constant and mechanical strength. In this context, this paper examines porosity and its impact on film properties for highly porous ultra low dielectric constant films. A series of PDEMS® porous OSG films were deposited by plasma enchanced chemical vapor deposition (PECVD) from DEMS® precursor (diethoxymethylsilane) and porogen ATRP (alpha-terpenine). The percent porosity and pore interconnectivity of these films relative to the dielectric constant were measured by ellipsometric porosimetry (EP) and positron annihilation spectroscopy (PALS) respectively. Porosity and pore-size distribution for films deposited using several different species (structure former or porogen precursors) were examined using EP in an effort to understand the impact of the chemical nature of the precursor on pore morphology. Results from these depositions show that it is possible to deposit films with smaller pores using alternative structure formers (ASFs) with bulky organic groups, although there are tradeoffs with respect to other film characteristics. The addition of a separate porogen (ATRP) to the ASF lowered the dielectric constant and the addition of DEMS® precursor to the ASF/ATRP mix gave the films added structural integrity and mechanical strength. Such a fundamental understanding of structure-property relationships will help support successful integration of these porous OSG films.

Plasma Polymerization of Low Dielectric Constant Fluoro-Hydrocarbon Film

1998 ◽  
Vol 544 ◽  
Author(s):  
Wei William Lee ◽  
George Tyndall ◽  
Raymond Zehringer ◽  
Mark Crowder
Keyword(s):  
Dielectric Constant ◽  
Photoelectron Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Low Dielectric Constant ◽  
Ecr Plasma ◽  
Low Dielectric ◽  
High Vapor ◽  
Deposited Films ◽  
Deposition Conditions

AbstractLow dielectric constant fluoro-hydrocarbon polymer films were deposited using an electron cyclotron resonance (ECR) plasma source with pentafluorostyrene as a precursor. The pentafluorostyrene is a cyclic liquid monomer with relative high vapor pressure. The chemical structure of the deposited films were characterized by X-ray photoelectron spectroscopy, infrared spectroscopy and Rutherford backscattering spectroscopy. The structure of deposited films studies gave an insight of the fluorohydrocarbon polymer formation regarding to deposition conditions. The dielectric constant of the film was found in the range of 2.2 to 2.4. The influence of deposition conditions on chemical, physical and electrical properties of the resulting films were evaluated.

scholarly journals Properties of Hydrogenated Nanoporous SiC: An Ab Initio Study

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Blair R. Tuttle ◽  
Nathan J. Held ◽  
Lai Hin Lam ◽  
Yu-Yang Zhang ◽  
Sokrates T. Pantelides
Keyword(s):  
Silicon Carbide ◽  
Dielectric Constant ◽  
Ab Initio ◽  
Pore Size ◽  
First Principles ◽  
Low Dielectric Constant ◽  
Ab Initio Study ◽  
Nanoporous Silicon ◽  
Low Dielectric ◽  
The Relationship

Nanoporous silicon carbide is part of the important organosilicate class of low dielectric constant alloys. We report first-principles microscopic calculations of the properties of crystalline nanoporous SiCH systems. Properties examined include the density, pore size, dielectric constant, and strain moduli. We examined the relationship between the various properties and the amount of hydrogen in the material. In addition, the bonding topology is examined. The present results are compared with a variety of experiments.

Fluorinated Carbon Films with Low Dielectric Constant Made from Novel Fluorocarbon Source Materials by RF Plasma Enhanced Chemical Vapor Deposition

1999 ◽  
Vol 38 (Part 2, No. 12B) ◽  
pp. L1544-L1546 ◽  
Author(s):  
Cristian Petrica Lungu ◽  
Ana Mihaela Lungu ◽  
Masamichi Akazawa ◽  
Yosuke Sakai ◽  
Hirotake Sugawara ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Low Dielectric Constant ◽  
Rf Plasma ◽  
Low Dielectric ◽  
Fluorinated Carbon ◽  
Source Materials
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