Understanding the Impact of Porosity and Pore Structure in Ultra Low Dielectric Constant Organosilicate Glasses

2012 ◽  
Vol 1428 ◽  
Author(s):  
Irene J. Hsu ◽  
Raymond N. Vrtis ◽  
Jennifer E. Al-Rashid ◽  
Anupama Mallikarjunan ◽  
Kathleen E. Theodorou ◽  
...  

ABSTRACTRecently there have been a number of reports indicating concern relating to the effect of porosity, pore size distribution, and pore interconnectivity on the integration of highly porous ultra low-k organosilicate glasses (OSGs) as back-end-of-line (BEOL) interconnect dielectrics. In an effort to address these concerns a number of options to control the skeleton and pore structure of OSGs have been proposed, from adding alternative OSG precursors to alternative porogen precursors. In all these options there is a need to balance pore structure modification with critical film properties such as dielectric constant and mechanical strength. In this context, this paper examines porosity and its impact on film properties for highly porous ultra low dielectric constant films. A series of PDEMS® porous OSG films were deposited by plasma enchanced chemical vapor deposition (PECVD) from DEMS® precursor (diethoxymethylsilane) and porogen ATRP (alpha-terpenine). The percent porosity and pore interconnectivity of these films relative to the dielectric constant were measured by ellipsometric porosimetry (EP) and positron annihilation spectroscopy (PALS) respectively. Porosity and pore-size distribution for films deposited using several different species (structure former or porogen precursors) were examined using EP in an effort to understand the impact of the chemical nature of the precursor on pore morphology. Results from these depositions show that it is possible to deposit films with smaller pores using alternative structure formers (ASFs) with bulky organic groups, although there are tradeoffs with respect to other film characteristics. The addition of a separate porogen (ATRP) to the ASF lowered the dielectric constant and the addition of DEMS® precursor to the ASF/ATRP mix gave the films added structural integrity and mechanical strength. Such a fundamental understanding of structure-property relationships will help support successful integration of these porous OSG films.

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).


Langmuir ◽  
2004 ◽  
Vol 20 (16) ◽  
pp. 6658-6667 ◽  
Author(s):  
Ronald C. Hedden ◽  
Hae-Jeong Lee ◽  
Christopher L. Soles ◽  
Barry J. Bauer

2001 ◽  
Vol 714 ◽  
Author(s):  
Yoon-Hae Kim ◽  
Moo Sung Hwang ◽  
Young Lee ◽  
Hyeong Joon Kim

ABSTRACTCarbon-containing silicon oxide (SiOC) is regarded as a potential low dielectric constant (low-κ) material for an interlayer dielectric (ILD) in next generation interconnection. In this study, we present the fundamental film properties and integration process compatibility of the low-κ SiOC film deposited by using bistrimethylsilylmethane (BTMSM) precursor. As more carbon was incorporated into film, both film density and dielectric constant decreased. The lowest κ-value, which we have obtained in this study, was 2.3 and the hardness of SiOC film was 1.1GPa as well as showing the thermal stability up to 500°C. In case of using conventional gases, organic components in SiOC film restricted etch rate. However, O2 addition could make it possible to obtaine a reasonable etch rate. The post-treatment of SiOC film in hydrogen plasma improved the resistance to O2 plasma in ashing process. The compatibility of SiOC film to the CMP process was also examined.


1992 ◽  
Vol 284 ◽  
Author(s):  
Masahiko Maeda

ABSTRACTSiBN ternary and SiOBN quaternary films prepared by rf-plasma and/or ECR-plasma CVD have been proposed, and this paper evaluates the relationship between film structure and dielectric constant as well as the other film properties. The SiBN films contain Si-N and B-N bonds, and the dielectric constant of the SiBN films reduces with increasing proportion of B-N bonds in the films. The SiBN films are less hygroscopic than BN films and they are therefore more stable. For the SiOBN films, the effects of oxygen doping on the dielectric constant and on breakdown strength are discussed in terms of the film composition and bonding configuration. The dielectric constant decreases with increasing oxygen atomic ratio and reaches a minimum when the amount of oxygen is equal to the amount of silicon. The effectiveness of this low-dielectric-constant material as an interlay-er is confirmed in actual VLSIs with planarized two-level metallization using the SiBN interlayer.


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