Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102)
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An oxide cap process for a PTFE-based IC dielectric

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) ◽

10.1109/iitc.1998.704924 ◽

2002 ◽

Author(s):

T. Rosenmayer ◽

J. Hammes ◽

J. Bartz ◽

P. Spevack

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A dual salicide process scalable to sub-0.25-μm CMOS technologies

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) ◽

10.1109/iitc.1998.704760 ◽

2002 ◽

Author(s):

X.W. Lin ◽

M. Weling ◽

D. Pramanik

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Control of dielectric chemical mechanical polishing (CMP) using an interferometry based endpoint sensor

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) ◽

10.1109/iitc.1998.704756 ◽

2002 ◽

Cited By ~ 3

Author(s):

S.J. Fang ◽

A. Barda ◽

T. Janecko ◽

W. Little ◽

D. Outley ◽

...

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing

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Analysis of Blech product threshold in passivated AlCu interconnections

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) ◽

10.1109/iitc.1998.704926 ◽

2002 ◽

Author(s):

L. Arnaud ◽

G. Tartavel ◽

P. Waltz ◽

L. Ulmer

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Barrier/seed layer requirements for copper interconnects

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) ◽

10.1109/iitc.1998.704764 ◽

2002 ◽

Cited By ~ 3

Author(s):

S.S. Wong ◽

C. Ryu ◽

H. Lee ◽

A.L.S. Loke ◽

K.-W. Kwon ◽

...

Keyword(s):

Seed Layer ◽

Copper Interconnects

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Robustness of self-aligned titanium silicide process: Improvement in yield of silicided devices with APM cleaning step

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) ◽

10.1109/iitc.1998.704787 ◽

2002 ◽

Author(s):

C.W. Lim ◽

K.H. Lee ◽

K.L. Pey ◽

H. Gong ◽

A.J. Bourdillon ◽

...

Keyword(s):

Process Improvement ◽

Titanium Silicide

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Characterization of the HDP-CVD oxide as interlayer dielectric material for sub-quarter micron CMOS

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) ◽

10.1109/iitc.1998.704921 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.W. Kim ◽

J.B. Lee ◽

J.G. Hong ◽

B.K. Hwang ◽

S.T. Kim ◽

...

Keyword(s):

Dielectric Material ◽

Interlayer Dielectric

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Nitrogen effect on post-nucleation tungsten CVD film growth

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) ◽

10.1109/iitc.1998.704792 ◽

2002 ◽

Author(s):

R. Petri ◽

H. Hauf ◽

D. Berenbaum ◽

J.C. Favreau ◽

P. Mazet

Keyword(s):

Film Growth ◽

Nitrogen Effect

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Dielectric anti-reflection coating application in a 0.175 μm dual-damascene process

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) ◽

10.1109/iitc.1998.704759 ◽

2002 ◽

Cited By ~ 1

Author(s):

G.Y. Lee ◽

Z.G. Lu ◽

D.M. Dobuzinsky ◽

X.J. Ning ◽

G. Costrini

Keyword(s):

Coating Application ◽

Dual Damascene ◽

Damascene Process

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A new low dielectric constant siloxane polymer: Accuspin/sup R/ T-24

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) ◽

10.1109/iitc.1998.704925 ◽

2002 ◽

Cited By ~ 1

Author(s):

N.P. Hacker ◽

L.K. Figge ◽

V. Flores ◽

S.P. Lefferts

Keyword(s):

Dielectric Constant ◽

Low Dielectric Constant ◽

Low Dielectric ◽

Siloxane Polymer

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Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

An oxide cap process for a PTFE-based IC dielectric

A dual salicide process scalable to sub-0.25-μm CMOS technologies

Control of dielectric chemical mechanical polishing (CMP) using an interferometry based endpoint sensor

Analysis of Blech product threshold in passivated AlCu interconnections

Barrier/seed layer requirements for copper interconnects

Robustness of self-aligned titanium silicide process: Improvement in yield of silicided devices with APM cleaning step

Characterization of the HDP-CVD oxide as interlayer dielectric material for sub-quarter micron CMOS

Nitrogen effect on post-nucleation tungsten CVD film growth

Dielectric anti-reflection coating application in a 0.175 μm dual-damascene process

A new low dielectric constant siloxane polymer: Accuspin/sup R/ T-24

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102)
Latest Publications