Plasma Polymerization of Low Dielectric Constant Fluoro-Hydrocarbon Film

1998 ◽  
Vol 544 ◽  
Author(s):  
Wei William Lee ◽  
George Tyndall ◽  
Raymond Zehringer ◽  
Mark Crowder
Keyword(s):  
Dielectric Constant ◽  
Photoelectron Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Low Dielectric Constant ◽  
Ecr Plasma ◽  
Low Dielectric ◽  
High Vapor ◽  
Deposited Films ◽  
Deposition Conditions

AbstractLow dielectric constant fluoro-hydrocarbon polymer films were deposited using an electron cyclotron resonance (ECR) plasma source with pentafluorostyrene as a precursor. The pentafluorostyrene is a cyclic liquid monomer with relative high vapor pressure. The chemical structure of the deposited films were characterized by X-ray photoelectron spectroscopy, infrared spectroscopy and Rutherford backscattering spectroscopy. The structure of deposited films studies gave an insight of the fluorohydrocarbon polymer formation regarding to deposition conditions. The dielectric constant of the film was found in the range of 2.2 to 2.4. The influence of deposition conditions on chemical, physical and electrical properties of the resulting films were evaluated.

Evaluation of Lpcvd Boron Nitride as a Low Dielectric Constant Material

1996 ◽  
Vol 427 ◽  
Author(s):  
R. A. Levy ◽  
M. Narayan ◽  
M. Z. Karim ◽  
S. T. Hsu
Keyword(s):  
Dielectric Constant ◽  
Boron Nitride ◽  
Flow Rate ◽  
Chemical Properties ◽  
Low Dielectric Constant ◽  
Processing Conditions ◽  
Low Dielectric ◽  
Rate Ratios ◽  
And Chemical Properties ◽  
Deposition Conditions

AbstractThis study characterizes low pressure chemically vapor deposited B-N-C-H as a low dielectric constant material for interlevel dielectric applications. These films are synthesized over a temperature range of 400 to 600 °C and various flow rate ratios using triethylamine borane complex (TEAB) and NH3 as precursors. The dielectric constant of these films exhibit values which varied in the range of 2.6 to 3.5 depending on processing conditions. Low dielectric constant values are achieved at film compositions which approached stoichiometry and have minimal carbon content. The variations in the structural, optical, mechanical, and chemical properties of these films as a function of deposition conditions are also discussed.

Spectroscopic Studies of Low Dielectric Constant Fluorinated Amorphous Carbon Films for Ulsi Integrated Circuits

1998 ◽  
Vol 524 ◽  
Author(s):  
Yanjun Ma ◽  
Hongning Yang ◽  
J. Guo ◽  
C. Sathe ◽  
A. Agui ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Spectroscopic Studies ◽  
Carbon Films ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
On Chip ◽  
Rc Delay

ABSTRACTPerformance of future generations of integrated circuits will be limited by the RC delay caused by on-chip interconnections. Overcoming this limitation requires the deployment of new high conductivity metals such as copper and low dielectric constant intermetal dielectrics (IMD). Fluorinated amorphous carbon (a-CFx) is a promising candidate for replacing SiO2 as the IMD. In this paper we investigated the structure and electronic properties of a-CFx thin films using high-resolution x-ray absorption, emission, and photoelectron spectroscopy. The composition and local bonding information were obtained and correlated with deposition conditions. The data suggest that the structure of the a-CFx is mostly of carbon rings and CF2 chains cross-linked with C atoms. The effects of growth temperature on the structure and the thermal stability of the film are discussed.

The deposition of SiOF film with low dielectric constant in a helicon plasma source

1996 ◽  
Vol 68 (11) ◽  
pp. 1507-1509 ◽  
Author(s):  
Jung‐Hyung Kim ◽  
Sang‐Hun Seo ◽  
Seok‐Min Yun ◽  
Hong‐Young Chang ◽  
Kwang‐Man Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Plasma Source ◽  
Low Dielectric Constant ◽  
Helicon Plasma ◽  
Low Dielectric

Low-Dielectric-Constant Interlayer Insulation for Multilevel Metallization

1992 ◽  
Vol 284 ◽  
Author(s):  
Masahiko Maeda
Keyword(s):  
Dielectric Constant ◽  
Breakdown Strength ◽  
Atomic Ratio ◽  
Film Structure ◽  
Low Dielectric Constant ◽  
Rf Plasma ◽  
Film Properties ◽  
Ecr Plasma ◽  
Low Dielectric ◽  
The Relationship

ABSTRACTSiBN ternary and SiOBN quaternary films prepared by rf-plasma and/or ECR-plasma CVD have been proposed, and this paper evaluates the relationship between film structure and dielectric constant as well as the other film properties. The SiBN films contain Si-N and B-N bonds, and the dielectric constant of the SiBN films reduces with increasing proportion of B-N bonds in the films. The SiBN films are less hygroscopic than BN films and they are therefore more stable. For the SiOBN films, the effects of oxygen doping on the dielectric constant and on breakdown strength are discussed in terms of the film composition and bonding configuration. The dielectric constant decreases with increasing oxygen atomic ratio and reaches a minimum when the amount of oxygen is equal to the amount of silicon. The effectiveness of this low-dielectric-constant material as an interlay-er is confirmed in actual VLSIs with planarized two-level metallization using the SiBN interlayer.

Dielectric properties of plasma-spray-deposited BaTiO3 and Ba0.68Sr0.32TiO3 thick films

2003 ◽  
Vol 18 (5) ◽  
pp. 1227-1231 ◽  
Author(s):  
K. Ahn ◽  
B. W. Wessels ◽  
S. Sampath
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Plasma Spray ◽  
Interfacial Layer ◽  
Thick Films ◽  
Low Dielectric Constant ◽  
Second Phase ◽  
Spray Process ◽  
Low Dielectric ◽  
Deposited Films

The dielectric properties of high-k dielectric BaTiO3 and Ba0.68Sr0.32TiO3 thick films deposited on alumina substrates using a plasma-spray process were investigated. The as-deposited films were predominantly crystalline but contained an amorphous second phase, the amount of which depended on spray conditions. The effect of the spray conditions on crystallinity was studied and related to the dielectric properties of the films. The presence of a low dielectric constant interfacial layer in plasma-spray-deposited films was determined from the dependence of the dielectric constant on film thickness. After annealing at 500 °C for 20 h in air, the crystallinity and dielectric constant increased. Annealing was also found to affect the interfacial layer properties.

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