scholarly journals Properties of Hydrogenated Nanoporous SiC: An Ab Initio Study

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Blair R. Tuttle ◽  
Nathan J. Held ◽  
Lai Hin Lam ◽  
Yu-Yang Zhang ◽  
Sokrates T. Pantelides
Keyword(s):  
Silicon Carbide ◽  
Dielectric Constant ◽  
Ab Initio ◽  
Pore Size ◽  
First Principles ◽  
Low Dielectric Constant ◽  
Ab Initio Study ◽  
Nanoporous Silicon ◽  
Low Dielectric ◽  
The Relationship

Nanoporous silicon carbide is part of the important organosilicate class of low dielectric constant alloys. We report first-principles microscopic calculations of the properties of crystalline nanoporous SiCH systems. Properties examined include the density, pore size, dielectric constant, and strain moduli. We examined the relationship between the various properties and the amount of hydrogen in the material. In addition, the bonding topology is examined. The present results are compared with a variety of experiments.

Low-Dielectric-Constant Interlayer Insulation for Multilevel Metallization

1992 ◽  
Vol 284 ◽  
Author(s):  
Masahiko Maeda
Keyword(s):  
Dielectric Constant ◽  
Breakdown Strength ◽  
Atomic Ratio ◽  
Film Structure ◽  
Low Dielectric Constant ◽  
Rf Plasma ◽  
Film Properties ◽  
Ecr Plasma ◽  
Low Dielectric ◽  
The Relationship

ABSTRACTSiBN ternary and SiOBN quaternary films prepared by rf-plasma and/or ECR-plasma CVD have been proposed, and this paper evaluates the relationship between film structure and dielectric constant as well as the other film properties. The SiBN films contain Si-N and B-N bonds, and the dielectric constant of the SiBN films reduces with increasing proportion of B-N bonds in the films. The SiBN films are less hygroscopic than BN films and they are therefore more stable. For the SiOBN films, the effects of oxygen doping on the dielectric constant and on breakdown strength are discussed in terms of the film composition and bonding configuration. The dielectric constant decreases with increasing oxygen atomic ratio and reaches a minimum when the amount of oxygen is equal to the amount of silicon. The effectiveness of this low-dielectric-constant material as an interlay-er is confirmed in actual VLSIs with planarized two-level metallization using the SiBN interlayer.

A New Low Dielectric Constant Polymer Material (k < 2): Microstructure, Electrical Properties, and Mechanical Properties

1999 ◽  
Vol 565 ◽  
Author(s):  
Yi-Pin Tsai ◽  
C. N. Liao ◽  
Yuhuan Xu ◽  
K. N. Tu ◽  
Bin Zhao ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Pore Size ◽  
Leakage Current ◽  
Polymer Material ◽  
Porous Polymer ◽  
Low Dielectric Constant ◽  
Two Phase ◽  
Low Dielectric

AbstractA porous polymer material, which is made of a two-phase composite and contains 35% porosity with a pore size less than 50Å, is found to have a dielectric constant of 1.8. It absorbs almost no water. The electrical properties, such as capacitance and leakage current, do not change with time and temperature.

Comparative Study of Pore Size of Low-Dielectric-Constant Porous Spin-on-Glass Films Using Different Methods of Nondestructive Instrumentation

2001 ◽  
Vol 40 (Part 2, No. 4A) ◽  
pp. L323-L326 ◽  
Author(s):  
Eiichi Kondoh ◽  
Mikhail R. Baklanov ◽  
Eric Lin ◽  
David Gidley ◽  
Akira Nakashima
Keyword(s):  
Dielectric Constant ◽  
Comparative Study ◽  
Pore Size ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Glass Films
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