Probing capped and uncapped mesoporous low-dielectric constant films using positron annihilation lifetime spectroscopy

2000 ◽  
Vol 77 (16) ◽  
pp. 2470-2472 ◽  
Author(s):  
Mihail P. Petkov ◽  
Marc H. Weber ◽  
Kelvin G. Lynn ◽  
Kenneth P. Rodbell
Keyword(s):  
Dielectric Constant ◽  
Positron Annihilation ◽  
Positron Annihilation Lifetime Spectroscopy ◽  
Low Dielectric Constant ◽  
Positron Annihilation Lifetime ◽  
Low Dielectric

Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy

2004 ◽  
Vol 95 (5) ◽  
pp. 2348-2354 ◽  
Author(s):  
R. S. Brusa ◽  
M. Spagolla ◽  
G. P. Karwasz ◽  
A. Zecca ◽  
G. Ottaviani ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Low Dielectric Constant ◽  
Low Dielectric

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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