High thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion

Synthetic antiferromagnets (SAFs), composed of Ru spacer with a Re insertion layer, reveal superior thermal stability up to 450 °C annealing, making the back-end of line process a wider manufacturing window and tolerance to integrate the perpendicular magnetic tunneling junctions (P-MTJs) into CMOS process. The coupling strength decays significantly for SAFs with single Ru spacer after annealing above 400 °C. Due to the characteristics of refractory metals, Re can behave as a diffusion barrier during annealing. Furthermore, the Re spacer can still keep reasonable RKKY coupling strength. Therefore, the SAFs with Ru/Re composite spacers exhibit higher RKKY coupling strength than Ru spacers after 450 °C annealing. In addition, we discovered the different enhancements for the upper and lower interfacial Re insertion, which was attributed to the varied defect formation at interfaces. The stacking fault was formed at the upper Ru/Co interface in as-deposited state. When Re was inserted at the upper interface, the diffusion between Co and Ru was significantly suppressed and the stacking fault can be eliminated during annealing, leading to enhanced interlayer coupling. Through the interfacial engineering, we may have more degrees of freedom to tune the SAF performance and thus enhance process compatibility of P-MTJ to the CMOS process.

A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory

Ferroelectric capacitors (FeCAPs) with high process compatibility, high reliability, ultra-low programming current and fast operation speed are promising candidates to traditional volatile and nonvolatile memory. In addition, they have great potential in the fields of storage, computing, and memory logic. Nevertheless, effective methods to realize logic and memory in FeCAP devices are still lacking. This study proposes a 1T2C FeCAP-based in situ bitwise X(N)OR logic based on a charge-sharing function. First, using the 1T2C structure and a two-step write-back circuit, the nondestructive reading is realized with less complexity than the previous work. Second, a method of two-line activation is used during the operation of X(N)OR. The verification results show that the speed, area and power consumption of the proposed 1T2C FeCAP-based bitwise logic operations are significantly improved.

Polysilicon devices as a highly compatible ESD protection with modulable voltage and low capacitance

The electronic circuits fabricated in a variety of technologies for different applications are all vulnerable to the electrostatic discharge (ESD) event. In this paper, polysilicon devices are investigated as ESD protection because of the noticeable advantages such as compatibility with several technologies, low parasitical capacitance, and little noise coupling. By forming the p-i-n diode in the polysilicon layer and stacking them together, the single polysilicon diode (SPD) and cascaded polysilicon diode (CasPD) are implemented in the 0.35 [Formula: see text] high voltage diffusion process. Through DC IV/CV, transmission line pulse (TLP), and zipping test, the CasPD presents as ESD protection for an S-band RF power amplifier, with high process-compatibility, modulable voltage, low leakage current and parasitic capacitance.

Including Sustainable Reporting Practices in Corporate Management Reports: Assessing the Impact of Transparency on Economic Performance

In terms of sustainability, traditional disclosure does not provide the necessary information to all stakeholders, mainly addressing the company’s shareholders’ expectations. As a result, organisations need to disclose more non-financial information, which implies social and environmental issues. Many organisations currently provide sustainability reports in addition to the annual management reports containing financial and economic data. Several studies have focused on adopting practices and tools in the sustainability area and their overlap with traditional managerial techniques and tools. Nevertheless, integration involves a harmonising process, compatibility and alignment between different management practices. This study aims to assess the impact that the inclusion of sustainable reporting practices in corporate management reports has on economic performance, and to support filling the gap in the specific literature by proposing an integrated reporting model achieved through a harmonising process, compatibility and alignment.

Implementation Improvement Analysis of M-Library Application and Related Business Processes at XYZ University

XYZ University library provides offline and online book loan services. The library's online service uses the m-library application. This study aims to see the implementation of the m-library application and see the extent of the evaluation of the application. The m-library application is used for the process of borrowing books, viewing catalogs, and reading book online. The method used in this research is qualitative descriptive through interviewing interviewees and observing applications. The results of this study are that there are several benefits and weaknesses to the m-library application. From these shortcomings, it can be recommended to increase the implementation of the m-library application, namely the need for application development towards menu flexibility and application services, ease of online membership registration process, compatibility of online and offline book catalogs and more effective use of application features according to the University library business process. This application also requires broader socialization to the university academic community so that its use is more optimum.

Study of Nuclear Structure for 36Si Isotope by Using Shell Model with Several Interactions

In this study, the nuclear shell model was applied to calculate the energy levels and reduced electric quadruple transition probability B(E2) for 36Si isotope using the OXBASH code within (1d3/2, 2s1/2, 2p3/2, 1f7/2) model space and using (HASN, ZBM2 and VPTH) interactions, As this isotope contains eight neutrons outside 28Si core in the region and when comparing the results of this study with the values. Available process compatibility was acceptable. There was good agreement at level 2+1, and angular momentum and parity were confirmed for levels 4+, 6+, and for all interactions, and the value of B(E2) corresponds well with the only practical value available for the transition .

Silicon-On-Nothing Micro-Pirani Gauge for Interior-Pressure Measurement

In the current work, we present a compact and cost effective Pirani gauge based on Silicon-On-Nothing (SON) technology. The proposed design uses an innovative approach of etching the sensing element directly in a crystalline silicon membrane. Such configuration allows pressure dependent heat losses to act on the substrate not only through the bottom cavity and trenches but also via the top cavity on the lid, which is formed by means of a sacrificial layer. By ensuring process compatibility with other SON-based MEMS, the proposed device can be used as a tool for cavity pressure monitoring and product support over the whole life cycle of MEMS: ranging from fabrication to calibration during field tests. Performance of the device is investigated based on numerical simulations and measurements. Furthermore, work includes a discussion of the fabrication process along with an additional cavity pressure characterization.