scholarly journals The Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions

2012 ◽  
Vol 2012 ◽  
pp. 1-4
Author(s):  
Yi-Lin Yang ◽  
Wenqi Zhang ◽  
Chi-Yun Cheng ◽  
Wen-kuan Yeh
Keyword(s):  
Leakage Current ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Metal Gate ◽  
Threshold Voltages ◽  
High K ◽  
Nitrogen Annealing

The oxygen and nitrogen were shown to diffuse through the TiN layer in the high-k/metal gate devices during PMA. Both the oxygen and nitrogen annealing will reduce the gate leakage current without increasing oxide thickness. The threshold voltages of the devices changed with various PMA conditions. The reliability of the devices, especially for the oxygen annealed devices, was improved after PMA treatments.

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

2011 ◽  
Vol 88 (7) ◽  
pp. 1309-1311 ◽  
Author(s):  
C.H. Fu ◽  
K.S. Chang-Liao ◽  
Y.A. Chang ◽  
Y.Y. Hsu ◽  
T.H. Tzeng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Equivalent Oxide Thickness ◽  
Gate Leakage ◽  
High K ◽  
High K Gate Dielectric

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

2005 ◽  
Vol 86 (14) ◽  
pp. 143507 ◽  
Author(s):  
N. Umezawa ◽  
K. Shiraishi ◽  
T. Ohno ◽  
H. Watanabe ◽  
T. Chikyow ◽  
...  
Keyword(s):  
Leakage Current ◽  
First Principles ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High K ◽  
Intrinsic Effect

Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with Al2O3 capping layer

2002 ◽  
Vol 38 (20) ◽  
pp. 1223 ◽  
Author(s):  
Chih-Wei Yang ◽  
Yean-Kuan Fang ◽  
Chien-Hao Chen ◽  
Wen-De Wang ◽  
Tin-Yu Lin ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dramatic Reduction ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Capping Layer ◽  
Poly Silicon ◽  
High K ◽  
High K Dielectric

High K / Metal Gate of Short-Channel SOI NMOSFET Research

2011 ◽  
Vol 383-390 ◽  
pp. 6902-6907
Author(s):  
Gang Lu ◽  
Bo Zhao
Keyword(s):  
Electrical Properties ◽  
Theoretical Analysis ◽  
Leakage Current ◽  
Device Performance ◽  
Gate Leakage Current ◽  
Metal Gate ◽  
Short Channel ◽  
Gate Structure ◽  
High K ◽  
Simulation Results

Short-channel under TaCN/La2O3gate structure SOI NMOSFET has been studied in this paper, contrast with the traditional gate structure gate leakage current and others electrical properties, using TaCN/La2O3gate structure，significantly improved short-channel device performance etc. Additionally, the gate structure in the L=40nm, 30nm and 20nm of C-V characteristic and output characteristic are also studied; all the simulation results coincide with the theoretical analysis.

Effects of Inversion Layer Quantization and Polysilicon Gate Depletion on Tunneling Current of Ultra-Thin SiO2 Gate Material

1999 ◽  
Vol 567 ◽  
Author(s):  
S. Saha ◽  
G. Srinivasan ◽  
G. A. Rezvani ◽  
M. Farr
Keyword(s):  
Leakage Current ◽  
Supply Voltage ◽  
Inversion Layer ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Polysilicon Gate ◽  
Gate Oxide Thickness ◽  
The Impact

ABSTRACTWe have investigated the impact of inversion layer quantization and polysilicon-gate depletion effects on the direct-tunneling gate-leakage current and reliability of ultra-thin silicon-dioxide gate dielectric. The gate-leakage current was measured for nMOSFET devices with gate oxide thickness down to 3 nm. A simulation-based methodology was used to determine the physical oxide thickness from the measured capacitance data, and the corresponding effective gate oxide thickness at inversion was computed from the simulation data obtained with and without the quantum mechanical and polysilicon depletion effects. The simulation results indicate that the effective gate oxide thickness is significantly higher than the physically grown oxide thickness due to inversion layer quantization and polysilicon depletion effects. The increase in oxide thickness is strongly dependent on the supply voltage and is more than 0.6 nm at 1 V. Our data, also, show that in order to maintain a leakage current ≥ 1 A/cm2 for 1 V operation, the effective gate oxide thickness must be ≥ 2.2 nm.

Gate Leakage Current Reduction in Two-Step Processed High-k Dielectrics for Low Power Applications

2010 ◽  
Author(s):  
G. Bersuker ◽  
D. Heh ◽  
J. Huang ◽  
C. S. Park ◽  
A. Padovani ◽  
...  
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High K ◽  
Current Reduction
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