1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387)
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Published By Japan Soc. Appl. Phys

4930813980

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Engineering systematic yield of fully-depleted SOI MOSFET

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799266 ◽

2003 ◽

Cited By ~ 2

Author(s):

N. Miura ◽

H. Hayashi ◽

K. Fukuda ◽

K. Nishi

Keyword(s):

Fully Depleted ◽

Soi Mosfet

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Advanced process/device modeling and its impact on the CMOS design solution

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799265 ◽

2003 ◽

Author(s):

S. Kumashiro

Keyword(s):

Design Solution ◽

Device Modeling ◽

Cmos Design

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Linking three-dimensional topography simulation with high pressure CVD reaction kinetics

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799295 ◽

2003 ◽

Cited By ~ 1

Author(s):

W. Pyka ◽

P. Fleischmann ◽

B. Haindl ◽

S. Selberherr

Keyword(s):

High Pressure ◽

Reaction Kinetics ◽

Three Dimensional

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Monte Carlo simulation of 50 nm devices with Schottky contact model

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799253 ◽

2003 ◽

Cited By ~ 5

Author(s):

K. Matsuzawa ◽

K. Uchida ◽

A. Nishiyama

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Schottky Contact ◽

Contact Model

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3-dimensional process simulation of rapid thermal annealing using a five species point defects diffusion model

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799259 ◽

2003 ◽

Author(s):

J. Herbaux ◽

V. Senez ◽

T. Hoffmann ◽

R. Bossut ◽

D. Brocard

Keyword(s):

Thermal Annealing ◽

Diffusion Model ◽

Rapid Thermal Annealing ◽

Point Defects ◽

Process Simulation ◽

3 Dimensional

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An efficient and accurate delay library generation with RSM [BiCMOS ASIC process]

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799269 ◽

2003 ◽

Author(s):

H. Sato ◽

Y. Ito ◽

H. Kunitomo ◽

H. Baba ◽

S. Isomura ◽

...

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NILE: a novel platform-independent and efficient distributed simulation system for TCAD

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799270 ◽

2003 ◽

Cited By ~ 1

Author(s):

K. Yoshitomi ◽

T. Tatsumi ◽

N. Nakauchi ◽

M. Mukai ◽

Y. Komatsu

Keyword(s):

Distributed Simulation ◽

Simulation System

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Simulation of direct tunneling through stacked gate dielectrics by a fully integrated 1D-Schrodinger-Poisson solver

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799306 ◽

2003 ◽

Author(s):

A. Wettstein ◽

A. Schenk ◽

W. Fichtner

Keyword(s):

Gate Dielectrics ◽

Fully Integrated ◽

Direct Tunneling ◽

Poisson Solver

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Parallelization of a Monte-Carlo ion implantation simulator for three-dimensional crystalline structures

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799271 ◽

2003 ◽

Cited By ~ 3

Author(s):

A. Hossinger ◽

M. Radi ◽

B. Scholz ◽

T. Fahringer ◽

E. Langer ◽

...

Keyword(s):

Monte Carlo ◽

Ion Implantation ◽

Three Dimensional ◽

Crystalline Structures

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Accurate resist profile simulation for large area OPC

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799273 ◽

2003 ◽

Cited By ~ 2

Author(s):

H. Inui ◽

T. Ohta

Keyword(s):

Large Area

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1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Japan Soc. Appl. Phys

Engineering systematic yield of fully-depleted SOI MOSFET

Advanced process/device modeling and its impact on the CMOS design solution

Linking three-dimensional topography simulation with high pressure CVD reaction kinetics

Monte Carlo simulation of 50 nm devices with Schottky contact model

3-dimensional process simulation of rapid thermal annealing using a five species point defects diffusion model

An efficient and accurate delay library generation with RSM [BiCMOS ASIC process]

NILE: a novel platform-independent and efficient distributed simulation system for TCAD

Simulation of direct tunneling through stacked gate dielectrics by a fully integrated 1D-Schrodinger-Poisson solver

Parallelization of a Monte-Carlo ion implantation simulator for three-dimensional crystalline structures

Accurate resist profile simulation for large area OPC

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387)
Latest Publications