Bidirectional-nonlinear threshold switching behaviors and thermally robust stability of ZnTe selectors by nitrogen annealing

Three-dimensional stackable memory frames involving the integration of two-terminal scalable crossbar arrays are expected to meet the demand for high-density memory storage, fast switching speed, and ultra-low power operation. However, two-terminal crossbar arrays introduce an unintended sneak path, which inevitably requires bidirectional nonlinear selectors. In this study, the advanced threshold switching (TS) features of ZnTe chalcogenide material-based selectors provide bidirectional threshold switching behavior, nonlinearity of 104, switching speed of less than 100 ns, and switching endurance of more than 107. In addition, thermally robust ZnTe selectors (up to 400 ℃) can be obtained through the use of nitrogen-annealing treatment. This process can prevent possible phase separation phenomena observed in generic chalcogenide materials during thermal annealing which occurs even at a low temperature of 250 ℃. The possible characteristics of the electrically and thermally advanced TS nature are described by diverse structural and electrical analyses through the Poole–Frankel conduction model.

Single-walled carbon nanotubes/lithium borohydride composites for hydrogen storage: role of in situ formed LiB(OH)4, Li2CO3 and LiBO2 by oxidation and nitrogen annealing

In situ formed Li+[B(OH)4]−, Li2+[CO3]− & Li+[BO2]− on the surface of SWCNT@LiBH4 not only stabilizes the composites in ambient conditions but also enhanced the de- and re-hydrogenation kinetics of the composites through catalytic effect.

Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability

The gate insulator process for SiC-MOSFET was examined and high-quality interface was realized by employing the pre-annealing process before high-temperature N2 annealing. The pre-annealing evidently activated the interface to introduce nitrogen, and then field-effect mobility exceeded 50 cm2/Vs. The fabricated sample also demonstrated superior bias temperature instability (BTI) and excellent breakdown electric field of 11.7 MV/cm.