First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

2005 ◽  
Vol 86 (14) ◽  
pp. 143507 ◽  
Author(s):  
N. Umezawa ◽  
K. Shiraishi ◽  
T. Ohno ◽  
H. Watanabe ◽  
T. Chikyow ◽  
...  
Keyword(s):  
Leakage Current ◽  
First Principles ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High K ◽  
Intrinsic Effect

Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with Al2O3 capping layer

2002 ◽  
Vol 38 (20) ◽  
pp. 1223 ◽  
Author(s):  
Chih-Wei Yang ◽  
Yean-Kuan Fang ◽  
Chien-Hao Chen ◽  
Wen-De Wang ◽  
Tin-Yu Lin ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dramatic Reduction ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Capping Layer ◽  
Poly Silicon ◽  
High K ◽  
High K Dielectric

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

2011 ◽  
Vol 88 (7) ◽  
pp. 1309-1311 ◽  
Author(s):  
C.H. Fu ◽  
K.S. Chang-Liao ◽  
Y.A. Chang ◽  
Y.Y. Hsu ◽  
T.H. Tzeng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Equivalent Oxide Thickness ◽  
Gate Leakage ◽  
High K ◽  
High K Gate Dielectric

Gate Leakage Current Reduction in Two-Step Processed High-k Dielectrics for Low Power Applications

2010 ◽  
Author(s):  
G. Bersuker ◽  
D. Heh ◽  
J. Huang ◽  
C. S. Park ◽  
A. Padovani ◽  
...  
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High K ◽  
Current Reduction

scholarly journals The Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions

2012 ◽  
Vol 2012 ◽  
pp. 1-4
Author(s):  
Yi-Lin Yang ◽  
Wenqi Zhang ◽  
Chi-Yun Cheng ◽  
Wen-kuan Yeh
Keyword(s):  
Leakage Current ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Metal Gate ◽  
Threshold Voltages ◽  
High K ◽  
Nitrogen Annealing

The oxygen and nitrogen were shown to diffuse through the TiN layer in the high-k/metal gate devices during PMA. Both the oxygen and nitrogen annealing will reduce the gate leakage current without increasing oxide thickness. The threshold voltages of the devices changed with various PMA conditions. The reliability of the devices, especially for the oxygen annealed devices, was improved after PMA treatments.

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