The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO[sub x]N[sub y] Gate Dielectrics

Hyung-Suk Jung; Jung-Min Park; Hyo Kyeom Kim; Jeong Hwan Kim; Seok-Jun Won; Joohwi Lee; Sang Young Lee; Cheol Seong Hwang; Weon-Hong Kim; Min-Woo Song; Nae-In Lee; Deok-Yong Cho

doi:10.1149/1.3456518

The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO[sub x]N[sub y] Gate Dielectrics

Electrochemical and Solid-State Letters ◽

10.1149/1.3456518 ◽

2010 ◽

Vol 13 (9) ◽

pp. G71 ◽

Cited By ~ 5

Author(s):

Hyung-Suk Jung ◽

Jung-Min Park ◽

Hyo Kyeom Kim ◽

Jeong Hwan Kim ◽

Seok-Jun Won ◽

...

Keyword(s):

Gate Dielectrics ◽

Temperature Instability ◽

Bias Temperature Instability

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Cited By ~ 22

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

Microelectronics Reliability ◽

10.1016/j.microrel.2010.01.012 ◽

2010 ◽

Vol 50 (5) ◽

pp. 614-617 ◽

Cited By ~ 7

Author(s):

H.W. Chen ◽

C.H. Liu

Keyword(s):

Gate Dielectrics ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

Microelectronic Engineering ◽

10.1016/j.mee.2005.04.054 ◽

2005 ◽

Vol 80 ◽

pp. 122-125 ◽

Cited By ~ 36

Author(s):

B. Kaczer ◽

V. Arkhipov ◽

M. Jurczak ◽

G. Groeseneken

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO[sub 2] Gate Dielectrics and Metal Gate

Journal of The Electrochemical Society ◽

10.1149/1.3276457 ◽

2010 ◽

Vol 157 (3) ◽

pp. H355 ◽

Cited By ~ 8

Author(s):

Hyung-Suk Jung ◽

Jeong Hwan Kim ◽

Joohwi Lee ◽

Sang Young Lee ◽

Un Ki Kim ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dd01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DD01 ◽

Cited By ~ 1

Author(s):

Motoyuki Sato ◽

Toshihide Nabatame ◽

Takayuki Aoyama ◽

Yasuo Nara ◽

Yuzuru Ohji

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Time Dependent ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4864416 ◽

2014 ◽

Vol 115 (7) ◽

pp. 074502 ◽

Cited By ~ 1

Author(s):

Piyas Samanta ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $\hbox{Gd}_{2} \hbox{O}_{3}$ Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2011.2157300 ◽

2011 ◽

Vol 32 (8) ◽

pp. 1017-1019

Author(s):

Jer-Chyi Wang ◽

Hsing-Kan Peng ◽

Chao-Sung Lai ◽

Pai-Chi Chou ◽

Min-Jer Lee

Keyword(s):

Ion Implantation ◽

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics

Journal of The Electrochemical Society ◽

10.1149/1.3332778 ◽

2010 ◽

Vol 157 (5) ◽

pp. G121 ◽

Cited By ~ 14

Author(s):

Hyung-Suk Jung ◽

Hyo Kyeom Kim ◽

Jeong Hwan Kim ◽

Seok-Jun Won ◽

Deok-Yong Cho ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Temperature Instability ◽

Bias Temperature Instability

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Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197743 ◽

2003 ◽

Cited By ~ 42

Author(s):

S. Tsujikawa ◽

T. Mine ◽

K. Watanabe ◽

Y. Shimamoto ◽

R. Tsuchiya ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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CMOS and Interconnect Reliability -- Bias-Temperature Instability in SiON and High-k Gate Dielectrics

2006 International Electron Devices Meeting ◽

10.1109/iedm.2006.346771 ◽

2006 ◽

Keyword(s):

Gate Dielectrics ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Interconnect Reliability

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