Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics

Hyung-Suk Jung; Hyo Kyeom Kim; Jeong Hwan Kim; Seok-Jun Won; Deok-Yong Cho; Joohwi Lee; Sang Young Lee; Cheol Seong Hwang; Jung-Min Park; Weon-Hong Kim; Min-Woo Song; Nae-In Lee; Sung Heo

doi:10.1149/1.3332778

Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics

Journal of The Electrochemical Society ◽

10.1149/1.3332778 ◽

2010 ◽

Vol 157 (5) ◽

pp. G121 ◽

Cited By ~ 14

Author(s):

Hyung-Suk Jung ◽

Hyo Kyeom Kim ◽

Jeong Hwan Kim ◽

Seok-Jun Won ◽

Deok-Yong Cho ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Temperature Instability ◽

Bias Temperature Instability

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Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO[sub 2] Gate Dielectrics and Metal Gate

Journal of The Electrochemical Society ◽

10.1149/1.3276457 ◽

2010 ◽

Vol 157 (3) ◽

pp. H355 ◽

Cited By ~ 8

Author(s):

Hyung-Suk Jung ◽

Jeong Hwan Kim ◽

Joohwi Lee ◽

Sang Young Lee ◽

Un Ki Kim ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dd01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DD01 ◽

Cited By ~ 1

Author(s):

Motoyuki Sato ◽

Toshihide Nabatame ◽

Takayuki Aoyama ◽

Yasuo Nara ◽

Yuzuru Ohji

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Time Dependent ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2183409 ◽

2006 ◽

Vol 99 (6) ◽

pp. 064510 ◽

Cited By ~ 12

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2907768 ◽

2008 ◽

Vol 103 (8) ◽

pp. 084512 ◽

Cited By ~ 5

Author(s):

Shiyang Zhu ◽

Anri Nakajima

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Instability ◽

Bias Temperature Instability

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Device Characteristics and Aggravated Negative Bias Temperature Instability inp-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3064 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3064-3069 ◽

Cited By ~ 8

Author(s):

Chia-Yu Lu ◽

Horng-Chih Lin ◽

Yi-Feng Chang ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Compressive Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2138372 ◽

2005 ◽

Vol 98 (11) ◽

pp. 114504 ◽

Cited By ~ 13

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Negative Bias Temperature Instability ◽

Charge Generation ◽

Oxide Charge ◽

Bias Temperature Instability

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Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2007.915289 ◽

2008 ◽

Vol 29 (3) ◽

pp. 242-245 ◽

Cited By ~ 3

Author(s):

Runsheng Wang ◽

Ru Huang ◽

Yandong He ◽

Zhenhua Wang ◽

Gaosheng Jia ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Si Nanowire ◽

Bias Temperature Instability

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The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/19/9/097306 ◽

2010 ◽

Vol 19 (9) ◽

pp. 097306 ◽

Cited By ~ 6

Author(s):

Cao Yan-Rong ◽

Ma Xiao-Hua ◽

Hao Yue ◽

Tian Wen-Chao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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New Simulation Method to Characterize the Recoverable Component of Dynamic Negative-Bias Temperature Instability in p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Journal of Electronic Materials ◽

10.1007/s11664-014-2978-8 ◽

2014 ◽

Vol 43 (4) ◽

pp. 1207-1213 ◽

Cited By ~ 3

Author(s):

H. Hussin ◽

N. Soin ◽

M.F. Bukhori ◽

Y. Abdul Wahab ◽

S. Shahabuddin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Simulation Method ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2011 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2011-2014 ◽

Cited By ~ 2

Author(s):

Jone F. Chen ◽

Dao-Hong Yang ◽

Chih-Yung Lin ◽

Shien-Yang Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Supply Voltage ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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