Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Piyas Samanta; Heng-Sheng Huang; Shuang-Yuan Chen; Chuan-Hsi Liu; Li-Wei Cheng

doi:10.1063/1.4864416

Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4864416 ◽

2014 ◽

Vol 115 (7) ◽

pp. 074502 ◽

Cited By ~ 1

Author(s):

Piyas Samanta ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Negative bias temperature instability in SOI‐like p‐type metal oxide semiconductor devices

Micro & Nano Letters ◽

10.1049/mnl.2018.0012 ◽

2018 ◽

Vol 13 (8) ◽

pp. 1151-1154

Author(s):

Lijie Li ◽

Chan Shan ◽

Ying Wang ◽

Xin Luo

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

Applied Physics Letters ◽

10.1063/1.4811274 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232909 ◽

Cited By ~ 8

Author(s):

Han Jin Lim ◽

Youngkuk Kim ◽

In Sang Jeon ◽

Jaehyun Yeo ◽

Badro Im ◽

...

Keyword(s):

Metal Oxide ◽

Field Emission ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

High K Dielectric

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Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics

Applied Physics Letters ◽

10.1063/1.4870047 ◽

2014 ◽

Vol 104 (12) ◽

pp. 122105 ◽

Cited By ~ 14

Author(s):

Atthawut Chanthaphan ◽

Takuji Hosoi ◽

Yuki Nakano ◽

Takashi Nakamura ◽

Takayoshi Shimura ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Aluminum Oxynitride ◽

Temperature Instability ◽

Bias Temperature Instability

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Bias temperature instability in SiC metal-oxide-semiconductor devices

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/abcd5e ◽

2020 ◽

Author(s):

Chao Yang ◽

Shengsheng Wei ◽

Dejun Wang

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Instability ◽

Bias Temperature Instability

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A new degradation mechanism and its role on negative bias temperature instability in metal-oxide-semiconductor devices

2014 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2014.7061206 ◽

2014 ◽

Author(s):

Piyas Samanta ◽

Mansun Chan

Keyword(s):

Metal Oxide ◽

Degradation Mechanism ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2928235 ◽

2008 ◽

Vol 92 (20) ◽

pp. 202901 ◽

Cited By ~ 7

Author(s):

De-Cheng Hsu ◽

Ingram Yin-ku Chang ◽

Ming-Tsong Wang ◽

Pi-Chun Juan ◽

Y. L. Wang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2183409 ◽

2006 ◽

Vol 99 (6) ◽

pp. 064510 ◽

Cited By ~ 12

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2907768 ◽

2008 ◽

Vol 103 (8) ◽

pp. 084512 ◽

Cited By ~ 5

Author(s):

Shiyang Zhu ◽

Anri Nakajima

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Instability ◽

Bias Temperature Instability

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Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions

Applied Physics Letters ◽

10.1063/1.4794942 ◽

2013 ◽

Vol 102 (9) ◽

pp. 093510 ◽

Cited By ~ 17

Author(s):

Atthawut Chanthaphan ◽

Takuji Hosoi ◽

Yuki Nakano ◽

Takashi Nakamura ◽

Takayoshi Shimura ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Mobile Ions

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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