Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO[sub 2] Gate Dielectrics and Metal Gate

Hyung-Suk Jung; Jeong Hwan Kim; Joohwi Lee; Sang Young Lee; Un Ki Kim; Cheol Seong Hwang; Jung-Min Park; Weon-Hong Kim; Min-Woo Song; Nae-In Lee

doi:10.1149/1.3276457

Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO[sub 2] Gate Dielectrics and Metal Gate

Journal of The Electrochemical Society ◽

10.1149/1.3276457 ◽

2010 ◽

Vol 157 (3) ◽

pp. H355 ◽

Cited By ~ 8

Author(s):

Hyung-Suk Jung ◽

Jeong Hwan Kim ◽

Joohwi Lee ◽

Sang Young Lee ◽

Un Ki Kim ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dd01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DD01 ◽

Cited By ~ 1

Author(s):

Motoyuki Sato ◽

Toshihide Nabatame ◽

Takayuki Aoyama ◽

Yasuo Nara ◽

Yuzuru Ohji

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Time Dependent ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Investigation of Positive and Negative Bias Temperature Instability of High-κ Dielectric Metal Gate Metal–Oxide–Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.036503 ◽

2013 ◽

Vol 52 (3R) ◽

pp. 036503 ◽

Cited By ~ 1

Author(s):

Da-Cheng Huang ◽

Jeng Gong ◽

Chih-Fang Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics

Journal of The Electrochemical Society ◽

10.1149/1.3332778 ◽

2010 ◽

Vol 157 (5) ◽

pp. G121 ◽

Cited By ~ 14

Author(s):

Hyung-Suk Jung ◽

Hyo Kyeom Kim ◽

Jeong Hwan Kim ◽

Seok-Jun Won ◽

Deok-Yong Cho ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Temperature Instability ◽

Bias Temperature Instability

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Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4773479 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012103 ◽

Cited By ~ 11

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Chi-Wei Wu ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2183409 ◽

2006 ◽

Vol 99 (6) ◽

pp. 064510 ◽

Cited By ~ 12

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2907768 ◽

2008 ◽

Vol 103 (8) ◽

pp. 084512 ◽

Cited By ~ 5

Author(s):

Shiyang Zhu ◽

Anri Nakajima

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3058740 ◽

2009 ◽

Vol 27 (1) ◽

pp. 463 ◽

Cited By ~ 3

Author(s):

M. Aoulaiche ◽

B. Kaczer ◽

Ph. J. Roussel ◽

R. O’Connor ◽

M. Houssa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Bias Temperature Instability ◽

High K ◽

P Type

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Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-k/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.3326 ◽

2008 ◽

Vol 47 (5) ◽

pp. 3326-3331

Author(s):

Motoyuki Sato ◽

Chihiro Tamura ◽

Kikuo Yamabe ◽

Kenji Shiraishi ◽

Seiichi Miyazaki ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Dielectric Breakdown ◽

Field Effect Transistors ◽

Time Dependent ◽

Metal Gate ◽

Time Dependent Dielectric Breakdown ◽

High K ◽

P Type ◽

Breakdown Model

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Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc08 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC08

Author(s):

Liangliang Zhang ◽

Changze Liu ◽

Runsheng Wang ◽

Ru Huang ◽

Tao Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Stress Condition ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Device Characteristics and Aggravated Negative Bias Temperature Instability inp-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3064 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3064-3069 ◽

Cited By ~ 8

Author(s):

Chia-Yu Lu ◽

Horng-Chih Lin ◽

Yi-Feng Chang ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Compressive Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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