Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $\hbox{Gd}_{2} \hbox{O}_{3}$ Gate Dielectrics

Jer-Chyi Wang; Hsing-Kan Peng; Chao-Sung Lai; Pai-Chi Chou; Min-Jer Lee

doi:10.1109/led.2011.2157300

Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $\hbox{Gd}_{2} \hbox{O}_{3}$ Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2011.2157300 ◽

2011 ◽

Vol 32 (8) ◽

pp. 1017-1019

Author(s):

Jer-Chyi Wang ◽

Hsing-Kan Peng ◽

Chao-Sung Lai ◽

Pai-Chi Chou ◽

Min-Jer Lee

Keyword(s):

Ion Implantation ◽

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Cited By ~ 22

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1−xO2and HfO2/Metal Gate Stacks

ECS Journal of Solid State Science and Technology ◽

10.1149/2.027309jss ◽

2013 ◽

Vol 2 (9) ◽

pp. Q187-Q191

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Chi-Wei Wu ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

...

Keyword(s):

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Gate Current ◽

Bias Stress ◽

Bias Temperature Instability

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Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

Microelectronic Engineering ◽

10.1016/j.mee.2005.04.054 ◽

2005 ◽

Vol 80 ◽

pp. 122-125 ◽

Cited By ~ 36

Author(s):

B. Kaczer ◽

V. Arkhipov ◽

M. Jurczak ◽

G. Groeseneken

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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New insight on negative bias temperature instability degradation with drain bias of 28nm High-K Metal Gate p-MOSFET devices

Microelectronics Reliability ◽

10.1016/j.microrel.2014.05.010 ◽

2014 ◽

Vol 54 (11) ◽

pp. 2378-2382 ◽

Cited By ~ 6

Author(s):

Miao Liao ◽

Zhenghao Gan

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Drain Bias

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Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2013.07.026 ◽

2013 ◽

Vol 53 (9-11) ◽

pp. 1351-1354

Author(s):

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Hyeokjin Kim ◽

Gang-Jun Kim ◽

Ji-Hoon Seo ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Stress Voltage

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Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of pMOSFET with High-k/Metal Gate Stacks

ECS Transactions ◽

10.1149/05201.0953ecst ◽

2013 ◽

Vol 52 (1) ◽

pp. 953-957 ◽

Cited By ~ 1

Author(s):

S. Ren ◽

H. Yang ◽

W. Wang ◽

H. Xu ◽

W. Luo ◽

...

Keyword(s):

Negative Bias ◽

Degradation Mechanisms ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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Investigation of Positive and Negative Bias Temperature Instability of High-κ Dielectric Metal Gate Metal–Oxide–Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.036503 ◽

2013 ◽

Vol 52 (3R) ◽

pp. 036503 ◽

Cited By ~ 1

Author(s):

Da-Cheng Huang ◽

Jeng Gong ◽

Chih-Fang Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Negative Bias Temperature Instability Study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation, HfO2 High-k Dielectric and TaN Metal Gate

ECS Meeting Abstracts ◽

10.1149/ma2012-02/43/3224 ◽

2012 ◽

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

High K Dielectric

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Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197743 ◽

2003 ◽

Cited By ~ 42

Author(s):

S. Tsujikawa ◽

T. Mine ◽

K. Watanabe ◽

Y. Shimamoto ◽

R. Tsuchiya ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4773479 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012103 ◽

Cited By ~ 11

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Chi-Wei Wu ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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