Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

2000 ◽  
Vol 147 (2) ◽  
pp. 756 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Mitsuharu Yonemura ◽  
Toshiaki Ono ◽  
Eiichi Asayama ◽  
...  
Keyword(s):  
Boron Doping ◽  
Silicon Substrates ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Effects of heavy boron doping upon oxygen precipitation in Czochralski silicon

1988 ◽  
Vol 64 (9) ◽  
pp. 4454-4465 ◽  
Author(s):  
S. Hahn ◽  
F. A. Ponce ◽  
W. A. Tiller ◽  
V. Stojanoff ◽  
D. A. P. Bulla ◽  
...  
Keyword(s):  
Boron Doping ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

The origin of defects in SiO2thermally grown on Czochralski silicon substrates

1995 ◽  
Vol 78 (3) ◽  
pp. 1940-1943 ◽  
Author(s):  
Manabu Itsumi ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Silicon Substrates ◽  
Czochralski Silicon

Determination of Sub‐Parts per Billion Boron Contamination in N+ Czochralski Silicon Substrates by SIMS

1994 ◽  
Vol 141 (12) ◽  
pp. 3453-3456 ◽  
Author(s):  
Paul K. Chu ◽  
Roger J. Bleiler ◽  
Jenny M. Metz
Keyword(s):  
Silicon Substrates ◽  
Czochralski Silicon

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1001-1011 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Xinpeng Zhang ◽  
Lixia Lin ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Phosphorus Doped

Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

1989 ◽  
Vol 66 (8) ◽  
pp. 3958-3960 ◽  
Author(s):  
Akito Hara ◽  
Tetsuo Fukuda ◽  
Toru Miyabo ◽  
Iesada Hirai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Oxygen Precipitation in N+ Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
W. Dyson ◽  
J. Makovsky
Keyword(s):  
Surface Defect ◽  
Nucleation Theory ◽  
Silicon Substrates ◽  
Precipitation Kinetics ◽  
Carrier Generation ◽  
Oxygen Precipitation ◽  
Homogeneous Nucleation Theory ◽  
P Type ◽  
Defect Densities ◽  
Sufficient Oxygen

The advantages of oxygen precipitation in terms of intrinsic gettering to reduce oxidation induced surface defect densities and improve minority carrier generation lifetimes (τ) are well documented in the literature (1–3). Various gettering cycles to establish oxygen precipitation in n type and p type nondegenerate substrates have been developed (4–6), based on homogeneous nucleation theory. For nondegenerate silicon no differences in oxygen precipitation kinetics related to the dopant type have been reported. However, with the increasing interest in both p/p+ and n/n+ epitaxial layers for CMOS devices (7), work on the precipitation of oxygen in both p+ and n+ degenerate silicon substrates has revealed a dependence of oxygen precipitation kinetics on dopant type (8–11). In the case of p+ silicon the differences in precipitation kinetics are small when compared to p- silicon (10,11). For n+ silicon it has been reported (8–11) that the dopant concentration plays a major role and that a significant retardation of oxygen precipitation is observed. There are currently two different explanations for the difficulty encountered in producing sufficient oxygen precipitation in n+ Si. These are the failure to incorporate sufficient oxygen into the crystal during crystal growth (12) and an interaction between intrinsic point defects and the n type dopant, which influences the oxygen precipitation kinetics (8,13).

Lifetime Degradation by Oxygen Precipitation Combined with Metal Contamination in Czochralski Silicon for Solar Cells

2019 ◽  
Vol 8 (4) ◽  
pp. Q72-Q75 ◽  
Author(s):  
Kohei Onishi ◽  
Kosuke Kinoshita ◽  
Takuto Kojima ◽  
Yoshio Ohshita ◽  
Atsushi Ogura
Keyword(s):  
Solar Cells ◽  
Metal Contamination ◽  
Czochralski Silicon ◽  
Oxygen Precipitation
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