Determination of Sub‐Parts per Billion Boron Contamination in N+ Czochralski Silicon Substrates by SIMS

1994 ◽  
Vol 141 (12) ◽  
pp. 3453-3456 ◽  
Author(s):  
Paul K. Chu ◽  
Roger J. Bleiler ◽  
Jenny M. Metz
Keyword(s):  
Silicon Substrates ◽  
Czochralski Silicon

The origin of defects in SiO2thermally grown on Czochralski silicon substrates

1995 ◽  
Vol 78 (3) ◽  
pp. 1940-1943 ◽  
Author(s):  
Manabu Itsumi ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Silicon Substrates ◽  
Czochralski Silicon

scholarly journals The Anomalous Influence of Polyelectrolyte Concentration on the Deposition and Nanostructure of Poly(ethyleneimine)/Poly(acrylic acid) Multilayers

Molecules ◽  
2019 ◽  
Vol 24 (11) ◽  
pp. 2141 ◽  
Author(s):  
Martin Müller
Keyword(s):  
Acrylic Acid ◽  
Attenuated Total Reflection ◽  
Silicon Substrates ◽  
Acid Base ◽  
Exponential Relationship ◽  
Individual Adsorption ◽  
The Individual ◽  
Poly Acrylic Acid

The deposition and nanostructure of polyelectrolyte (PEL) multilayers (PEMs) of branched poly(ethyleneimine)/poly(acrylic acid) (PEI/PAA) onto silicon substrates was studied in terms of the dependence of pH and the PEL concentration (cPEL) in the individual adsorption steps z. Both a commercial automatic dipping device and a homebuilt automatic stream coating device (flow cell) were used. Gravimetry, SFM, transmission (TRANS) and in situ attenuated total reflection (ATR) FTIR spectroscopy were used for the quantitative determination of the adsorbed amount, thickness, chemical composition and morphology of deposited PEMs, respectively. Firstly, the combination of pH = 10 for PEI and pH = 4 for PAA, where both PEL were predominantly in the neutral state, resulted in an extraordinarily high PEM deposition, while pH combinations, where one PEL component was charged, resulted in a significantly lower PEM deposition. This was attributed to both PEL conformation effects and acid/base interactions between basic PEI and acidic PAA. Secondly, for that pH combination an exponential relationship between PEM thickness and adsorption step z was found. Thirdly, based on the results of three independent methods, the course of the deposited amount of a PEM-10 (z = 10) versus cPEL in the range 0.001 to 0.015 M at pH = 10/4 was non-monotonous showing a pronounced maximum at cPEL = 0.005 M. Analogously, for cPEL = 0.005 M a maximum of roughness and structure size was found. Fourthly, related to that finding, in situ ATR-FTIR measurements gave evidence for the release of outermost located PEI upon PAA immersion (even step) and of outermost PAA upon PEI immersion (odd step) under formation of PEL complexes in solution. These studies help us to prepare PEL-based films with a defined thickness and morphology for interaction with biofluids in the biomedical and food fields.

scholarly journals Advanced determination of piezoelectric properties of AlN thin films on silicon substrates

2008 ◽  
Author(s):  
J.L. Sanchez-Rojas ◽  
J. Hernando ◽  
A. Ababneh ◽  
U. Schmid ◽  
J. Olivares ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Properties ◽  
Silicon Substrates

Record Efficiency on Large Area P-Type Czochralski Silicon Substrates

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NA08 ◽  
Author(s):  
Brett Hallam ◽  
Stuart Wenham ◽  
Haeseok Lee ◽  
Eunjoo Lee ◽  
Hyunwoo Lee ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Large Area ◽  
Czochralski Silicon ◽  
P Type

Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

2010 ◽  
Vol 8 (3) ◽  
pp. 674-677 ◽  
Author(s):  
Jiahe Chen ◽  
Jan Vanhellemont ◽  
Eddy Simoen ◽  
Johan Lauwaert ◽  
Henk Vrielinck ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Silicon Substrates ◽  
Czochralski Silicon ◽  
Induced Defects ◽  
Irradiation Induced Defects
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