Effects of heavy boron doping upon oxygen precipitation in Czochralski silicon

1988 ◽  
Vol 64 (9) ◽  
pp. 4454-4465 ◽  
Author(s):  
S. Hahn ◽  
F. A. Ponce ◽  
W. A. Tiller ◽  
V. Stojanoff ◽  
D. A. P. Bulla ◽  
...  
Keyword(s):  
Boron Doping ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

2000 ◽  
Vol 147 (2) ◽  
pp. 756 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Mitsuharu Yonemura ◽  
Toshiaki Ono ◽  
Eiichi Asayama ◽  
...  
Keyword(s):  
Boron Doping ◽  
Silicon Substrates ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1001-1011 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Xinpeng Zhang ◽  
Lixia Lin ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Phosphorus Doped

Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

1989 ◽  
Vol 66 (8) ◽  
pp. 3958-3960 ◽  
Author(s):  
Akito Hara ◽  
Tetsuo Fukuda ◽  
Toru Miyabo ◽  
Iesada Hirai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Lifetime Degradation by Oxygen Precipitation Combined with Metal Contamination in Czochralski Silicon for Solar Cells

2019 ◽  
Vol 8 (4) ◽  
pp. Q72-Q75 ◽  
Author(s):  
Kohei Onishi ◽  
Kosuke Kinoshita ◽  
Takuto Kojima ◽  
Yoshio Ohshita ◽  
Atsushi Ogura
Keyword(s):  
Solar Cells ◽  
Metal Contamination ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

1997 ◽  
Vol 144 (3) ◽  
pp. 1111-1120 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Effect of annealing atmosphere on oxygen precipitation and formation of denuded zone in Czochralski silicon wafer

2006 ◽  
Vol 203 (10) ◽  
pp. 2370-2375 ◽  
Author(s):  
Can Cui ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Ruixin Fan ◽  
Duanlin Que
Keyword(s):  
Silicon Wafer ◽  
Annealing Atmosphere ◽  
Czochralski Silicon ◽  
Oxygen Precipitation
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