Lifetime Degradation by Oxygen Precipitation Combined with Metal Contamination in Czochralski Silicon for Solar Cells

2019 ◽  
Vol 8 (4) ◽  
pp. Q72-Q75 ◽  
Author(s):  
Kohei Onishi ◽  
Kosuke Kinoshita ◽  
Takuto Kojima ◽  
Yoshio Ohshita ◽  
Atsushi Ogura
Keyword(s):  
Solar Cells ◽  
Metal Contamination ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Effect of oxygen precipitation on the performance of Czochralski silicon solar cells

2011 ◽  
Vol 95 (11) ◽  
pp. 3148-3151 ◽  
Author(s):  
Lin Chen ◽  
Xuegong Yu ◽  
Peng Chen ◽  
Peng Wang ◽  
Xin Gu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1001-1011 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Xinpeng Zhang ◽  
Lixia Lin ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Phosphorus Doped

Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

1989 ◽  
Vol 66 (8) ◽  
pp. 3958-3960 ◽  
Author(s):  
Akito Hara ◽  
Tetsuo Fukuda ◽  
Toru Miyabo ◽  
Iesada Hirai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Light-induced degradation in compensated n-type Czochralski silicon solar cells

2010 ◽  
Vol 208 (3) ◽  
pp. 572-575 ◽  
Author(s):  
Thomas Schutz-Kuchly ◽  
Sébastien Dubois ◽  
Jordi Veirman ◽  
Yannick Veschetti ◽  
Dick Heslinga ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Czochralski Silicon

scholarly journals Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar Cells

2019 ◽  
Vol 2019 ◽  
pp. 1-10
Author(s):  
Jiaxing Ye ◽  
Bin Ai ◽  
Jingsheng Jin ◽  
Depeng Qiu ◽  
Runxiong Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Processing Time ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Degradation Process ◽  
Open Circuit ◽  
Injection Current ◽  
Processing Temperature ◽  
Czochralski Silicon ◽  
Electrical Injection

In this paper, 156 mm×156 mm boron-doped Czochralski silicon (Cz-Si) wafers were fabricated into PERC solar cells by using the industrial standard process; then, the as-prepared PERC solar cells were treated by the regeneration process using electrical injection and heating and the effects of different regeneration processes (temperature, time, and injection current) on the anti-light-induced degradation (anti-LID) performance of the PERC solar cells were investigated. The results show that under the condition of 10 A injection current and 30 min processing time, the optimal processing temperature is about 180°C for PERC solar cells to obtain the best anti-LID performance. Under the conditions of a temperature of 180°C, an injection current of 10 A, and a processing time of 0-30 min, the anti-LID performance of the PERC solar cells is enhanced with the increase in the processing time. When the processing time is 20 and 30 min, the efficiency, the short-circuit current, and the open-circuit voltage of the processed PERC solar cells are slightly higher than the initial values before the regeneration and remain stable in the subsequent 12-hour light degradation process at 45°C and 1-sun illumination. At a temperature of 180°C and a processing time of 30 min, the injection current of 6 A is enough to obtain a good regeneration effect, but the optimal injection current is around 10 A.

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