Enhanced oxygen precipitation in neutron-irradiated nitrogen-doped Czochralski silicon crystal

2008 ◽  
Vol 104 (12) ◽  
pp. 123523 ◽  
Author(s):  
Can Cui ◽  
Xiangyang Ma ◽  
Deren Yang
Keyword(s):  
Silicon Crystal ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal

2000 ◽  
Vol 87 (8) ◽  
pp. 3669-3673 ◽  
Author(s):  
Peidong Liu ◽  
Xiangyang Ma ◽  
Jinxin Zhang ◽  
Liben Li ◽  
Duanlin Que
Keyword(s):  
Silicon Crystal ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Effect of iron on oxygen precipitation in nitrogen-doped Czochralski silicon

1998 ◽  
Vol 84 (10) ◽  
pp. 5502-5505 ◽  
Author(s):  
Xiwen Zhang ◽  
Deren Yang ◽  
Ruixin Fan ◽  
Jinxin Zhang ◽  
Duanlin Que
Keyword(s):  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Crystal growth and oxygen precipitation behavior of 300mm nitrogen-doped Czochralski silicon

2006 ◽  
Vol 292 (2) ◽  
pp. 257-259 ◽  
Author(s):  
Daxi Tian ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Liben Li ◽  
Duanlin Que
Keyword(s):  
Crystal Growth ◽  
Precipitation Behavior ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

2019 ◽  
Vol 3 (4) ◽  
pp. 89-96
Author(s):  
Deren Yang ◽  
Qiang Ma ◽  
Xiangyang Ma ◽  
Duanlin Duan
Keyword(s):  
Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Germanium in Czochralski Silicon

2005 ◽  
Vol 242-244 ◽  
pp. 169-184 ◽  
Author(s):  
De Ren Yang ◽  
Jiahe Chen
Keyword(s):  
Mechanical Strength ◽  
Crystal Lattice ◽  
Silicon Crystal ◽  
Zone Formation ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

The behaviors of isovalent impurities doped in Czochralski (CZ) silicon crystal have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about germanium in CZ silicon is presented. The disturbance of silicon crystal lattice in and the influence on the mechanical strength due to germanium doping is described. Oxygen related donors, oxygen precipitation and voids defects in germanium doped Czochralski (GCZ) silicon has been demonstrated in detail. In addition, the denuded zone formation and the internal gettering technology of GCZ silicon is also discussed.

Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Ikari ◽  
H. Haga ◽  
O. Yoda ◽  
A. Uedono ◽  
Y. Ujihira
Keyword(s):  
Annealing Temperature ◽  
Silicon Crystal ◽  
Ir Absorption ◽  
Quenching Temperature ◽  
Annealing Behavior ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Ir Absorption Spectra ◽  
Oxygen Precipitates ◽  
Oxygen Complexes

ABSTRACTWe have studied the nucleation of oxygen precipitates in Czochralski (Cz) Si crystal quenched from high temperature (1390°C). We observed that the oxygen precipitation was enhanced by the quenching treatment. We found the density of precipitates in the quenched crystal depended on quenching temperature and that nuclei for oxygen precipitates were introduced during quenching. We studied these nuclei using infrared absorption (IR) and positron annihilation techniques. In order to clarify the state of the nuclei, the quenched specimens were irradiated with 3-MeV electrons at a dose of 1×1018e/cm2 and vacancy-oxygen complexes were introduced. Positron lifetime spectra and IR absorption spectra for these specimens were measured as a function of isochronal annealing temperature. From the annealing behavior of the vacancy-oxygen complexes, it was found that oxygen clusters are introduced by the quenching and these clusters are the nuclei for the enhanced precipitation of the quenched Si crystal.

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