Electric field distributions in a molecular-beam epitaxy Ga0.83Al0.17As/GaAs/GaAs structure using photoreflectance

1989 ◽  
Vol 7 (4) ◽  
pp. 804 ◽  
Author(s):  
H. Shen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Molecular Beam ◽  
Field Distributions ◽  
Gaas Structure

Electric field mediated non-volatile tuning magnetism at the single-crystalline Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 interface

Nanoscale ◽  
2015 ◽  
Vol 7 (9) ◽  
pp. 4187-4192 ◽  
Author(s):  
Chao Zhang ◽  
Fenglong Wang ◽  
Chunhui Dong ◽  
Cunxu Gao ◽  
Chenglong Jia ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Field Control

We report non-volatile electric-field control of magnetism modulation in Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) heterostructure by fabricating an epitaxial Fe layer on a PMN-PT substrate using a molecular beam epitaxy technique.

Band Alignment of Molecular-Beam-Epitaxy-Grown GaS/GaAs Structure Using a Single [(t-Bu)GaS]4 Precursor

2001 ◽  
Vol 40 (Part 2, No. 2A) ◽  
pp. L104-L107 ◽  
Author(s):  
Naoya Okamoto ◽  
Hitoshi Tanaka ◽  
Naoki Hara
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Alignment ◽  
Gaas Structure

Photoreflection study on the surface electric field of delta‐doped GaAs grown by molecular beam epitaxy

1992 ◽  
Vol 72 (4) ◽  
pp. 1468-1472 ◽  
Author(s):  
D. G. Liu ◽  
K. H. Chang ◽  
C. P. Lee ◽  
T. M. Hsu ◽  
Y. C. Tien
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Molecular Beam ◽  
Surface Electric Field

Photoreflectance Study of Strained InAIAs/InP Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
Jenn-Shyong Hwang ◽  
W. Y. Chou ◽  
S. L. Tyan ◽  
Y. C. Wang ◽  
J. H. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Fermi Level ◽  
Layer Thickness ◽  
Surface Potential ◽  
Molecular Beam ◽  
Surface States ◽  
Energy Band Gap ◽  
Characteristic Region ◽  
Surface Fermi Level

ABSTRACTWe have studied the photoreflectance spectra at 300 K from a series of strained In1−xAlxAs/InP (0.42<x<0.57) strained structures grown by molecular beam epitaxy. From the observed Franz-Keldysh Oscillation we evaluate the built-in de electric field and hence the surface potential under different strain. We found that the surface Fermi level is not pinned at midgap under different strainwhich results in contrast to AIGaAs and GaAs. In addition, from the observed dependence of the built-in electric field Fdc and surface potential barrier Vm on the top layer thickness, we conclude that the surface states are distributed over two separate regions within the energy band gap under different strain and the densities of the surface states are as low as (2,71α0.05)x 1011 cm−2 for the distribution near the conduction band and (4.29α0.05)x1011 cm-2 for the distribution near the valence band. The Fermi level is weakly pinned while the top layer thickness is within the characteristic region of each sample.

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