Photoreflection study on the surface electric field of delta‐doped GaAs grown by molecular beam epitaxy

1992 ◽  
Vol 72 (4) ◽  
pp. 1468-1472 ◽  
Author(s):  
D. G. Liu ◽  
K. H. Chang ◽  
C. P. Lee ◽  
T. M. Hsu ◽  
Y. C. Tien
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Molecular Beam ◽  
Surface Electric Field

Electric field mediated non-volatile tuning magnetism at the single-crystalline Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 interface

Nanoscale ◽  
2015 ◽  
Vol 7 (9) ◽  
pp. 4187-4192 ◽  
Author(s):  
Chao Zhang ◽  
Fenglong Wang ◽  
Chunhui Dong ◽  
Cunxu Gao ◽  
Chenglong Jia ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Field Control

We report non-volatile electric-field control of magnetism modulation in Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) heterostructure by fabricating an epitaxial Fe layer on a PMN-PT substrate using a molecular beam epitaxy technique.

Photoreflectance Study of Strained InAIAs/InP Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
Jenn-Shyong Hwang ◽  
W. Y. Chou ◽  
S. L. Tyan ◽  
Y. C. Wang ◽  
J. H. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Fermi Level ◽  
Layer Thickness ◽  
Surface Potential ◽  
Molecular Beam ◽  
Surface States ◽  
Energy Band Gap ◽  
Characteristic Region ◽  
Surface Fermi Level

ABSTRACTWe have studied the photoreflectance spectra at 300 K from a series of strained In1−xAlxAs/InP (0.42<x<0.57) strained structures grown by molecular beam epitaxy. From the observed Franz-Keldysh Oscillation we evaluate the built-in de electric field and hence the surface potential under different strain. We found that the surface Fermi level is not pinned at midgap under different strainwhich results in contrast to AIGaAs and GaAs. In addition, from the observed dependence of the built-in electric field Fdc and surface potential barrier Vm on the top layer thickness, we conclude that the surface states are distributed over two separate regions within the energy band gap under different strain and the densities of the surface states are as low as (2,71α0.05)x 1011 cm−2 for the distribution near the conduction band and (4.29α0.05)x1011 cm-2 for the distribution near the valence band. The Fermi level is weakly pinned while the top layer thickness is within the characteristic region of each sample.

scholarly journals Electric field-tunable BaxSr1−xTiO3 films with high figures of merit grown by molecular beam epitaxy

2012 ◽  
Vol 101 (25) ◽  
pp. 252906 ◽  
Author(s):  
Evgeny Mikheev ◽  
Adam P. Kajdos ◽  
Adam J. Hauser ◽  
Susanne Stemmer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Molecular Beam ◽  
Figures Of Merit
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