The electric field induced photoluminescence properties of GaAs/AlxGa1−xAs quantum‐well structures grown by molecular‐beam epitaxy

1987 ◽  
Vol 62 (2) ◽  
pp. 644-647 ◽  
Author(s):  
M. Naganuma ◽  
T. Ishibashi ◽  
Y. Horikoshi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Quantum Well ◽  
Molecular Beam ◽  
Photoluminescence Properties ◽  
Quantum Well Structures

GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

1985 ◽  
Vol 47 (4) ◽  
pp. 394-396 ◽  
Author(s):  
H. Temkin ◽  
M. B. Panish ◽  
P. M. Petroff ◽  
R. A. Hamm ◽  
J. M. Vandenberg ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Gas Source

Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

1996 ◽  
Vol 11 (8) ◽  
pp. 1185-1188 ◽  
Author(s):  
A N Baranov ◽  
Y Cuminal ◽  
G Boissier ◽  
J C Nicolas ◽  
J L Lazzari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
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