Low-dark-current low-voltage 1.3–1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy

1984 ◽  
Vol 20 (15) ◽  
pp. 635 ◽  
Author(s):  
F. Capasso ◽  
A.Y. Cho ◽  
P.W. Foy
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Dark Current ◽  
Molecular Beam ◽  
Low Voltage ◽  
Avalanche Photodiode ◽  
Field Profile ◽  
Electric Field Profile

III-NITRIDE/SiC SEPARATE ABSORPTION AND MULTIPLICATION AVALANCHE PHOTODIODES: THE IMPORTANCE OF CONTROLLING POLARIZATION-INDUCED INTERFACE CHARGE

2011 ◽  
Vol 20 (03) ◽  
pp. 487-496
Author(s):  
ANAND V. SAMPATH ◽  
R. W. ENCK ◽  
H. SHEN ◽  
M. WRABACK ◽  
Q. ZHOU ◽  
...  
Keyword(s):  
Electric Field ◽  
Wide Spectrum ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Total Density ◽  
Field Profile ◽  
Device Structure ◽  
Absorption Region ◽  
Interface Charge ◽  
Electric Field Profile

A III-Nitride/ SiC separate absorption and multiplication avalanche photodiode (SAM-APD) offers a novel approach for fabricating high gain photodetectors with tunable absorption over a wide spectrum from the visible to deep ulltraviolet. However, unlike conventional heterojunction SAM APDs, the formation of polarization-induced charge at the hetero-interface arising from spontaneous and piezoelectric polarization can dramatically affect the performance of this detector. In this paper we report on the role of this interface charge on the performance of GaN / SiC SAM APDs. Simulations of the electric field profile within this device structure while biased near avalanche breakdown indicate that the density of positive interface charge may be sufficient to confine the electric field within the SiC multiplication region with negligible punch-through into the GaN absorption region, a distribution that is likely undesirable for efficient collection of photo-generated holes due to the presence of defects at the hetero-interface. Simulations further show that the incorporation of a p -type doped interface charge control layer at the hetero-interface can modify the total density of charge at the interface and allow for the tailoring of the electric field profile within this device. Experimental results are provided that correlate well with the simulation results.

Inverted InAlAs/InGaAs Avalanche Photodiode with Low–High–Low Electric Field Profile

2012 ◽  
Vol 51 (2) ◽  
pp. 02BG03 ◽  
Author(s):  
Masahiro Nada ◽  
Yoshifumi Muramoto ◽  
Haruki Yokoyama ◽  
Naoteru Shigekawa ◽  
Tadao Ishibashi ◽  
...  
Keyword(s):  
Electric Field ◽  
Avalanche Photodiode ◽  
Field Profile ◽  
Electric Field Profile

Inverted InAlAs/InGaAs Avalanche Photodiode with Low–High–Low Electric Field Profile

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BG03 ◽  
Author(s):  
Masahiro Nada ◽  
Yoshifumi Muramoto ◽  
Haruki Yokoyama ◽  
Naoteru Shigekawa ◽  
Tadao Ishibashi ◽  
...  
Keyword(s):  
Electric Field ◽  
Avalanche Photodiode ◽  
Field Profile ◽  
Electric Field Profile

Electric-field profile and current control of a long epitaxial GaAs n layer

1972 ◽  
Vol 8 (4) ◽  
pp. 93 ◽  
Author(s):  
G.A. Swartz ◽  
A. Gonzalez ◽  
A. Dreeben
Keyword(s):  
Electric Field ◽  
Current Control ◽  
Field Profile ◽  
Epitaxial Gaas ◽  
Electric Field Profile
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