Photoreflectance Study of Strained InAIAs/InP Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
Jenn-Shyong Hwang ◽  
W. Y. Chou ◽  
S. L. Tyan ◽  
Y. C. Wang ◽  
J. H. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Fermi Level ◽  
Layer Thickness ◽  
Surface Potential ◽  
Molecular Beam ◽  
Surface States ◽  
Energy Band Gap ◽  
Characteristic Region ◽  
Surface Fermi Level

ABSTRACTWe have studied the photoreflectance spectra at 300 K from a series of strained In1−xAlxAs/InP (0.42<x<0.57) strained structures grown by molecular beam epitaxy. From the observed Franz-Keldysh Oscillation we evaluate the built-in de electric field and hence the surface potential under different strain. We found that the surface Fermi level is not pinned at midgap under different strainwhich results in contrast to AIGaAs and GaAs. In addition, from the observed dependence of the built-in electric field Fdc and surface potential barrier Vm on the top layer thickness, we conclude that the surface states are distributed over two separate regions within the energy band gap under different strain and the densities of the surface states are as low as (2,71α0.05)x 1011 cm−2 for the distribution near the conduction band and (4.29α0.05)x1011 cm-2 for the distribution near the valence band. The Fermi level is weakly pinned while the top layer thickness is within the characteristic region of each sample.

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

2008 ◽  
Vol 93 (4) ◽  
pp. 041913 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Aleksandra Apostoluk ◽  
Wojciech Rudno-Rudzinski ◽  
Melania Lijadi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Surface Fermi Level

scholarly journals Раскрытие энергетической щели в области точки Дирака при осаждении кобальта на поверхность (0001) топологического изолятора BiSbTeSe-=SUB=-2-=/SUB=-

2020 ◽  
Vol 54 (9) ◽  
pp. 859
Author(s):  
А.К. Кавеев ◽  
А.Г Банщиков ◽  
А.Н Терпицкий ◽  
В.А Голяшов ◽  
О.Е Терещенко ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Dirac Point ◽  
Surface States ◽  
Energy Band Gap ◽  
Temperature Dependent ◽  
Molecular Beam Epitaxy Method ◽  
Topological Surface ◽  
First Time

It was shown for the first time that Co subnanometer coaverage, being deposited by molecular beam epitaxy method onto the (0001) surface of the BiSbTeSe2 topological insulator at 330 °C, opens an energy band gap in the spectrum of topological surface states in the region of the Dirac point, with a shift in the position of the Dirac point caused by preliminary deposition of the adsorbate at room temperature. The gap band width is 21 +/- 6 meV. Temperature-dependent measurements in the 15-150 K range did not show any width changes.

Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

2013 ◽  
Vol 103 (5) ◽  
pp. 052107 ◽  
Author(s):  
R. Kudrawiec ◽  
L. Janicki ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
G. Cywinski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Potential Barrier ◽  
Surface Potential ◽  
Molecular Beam

scholarly journals Experimental Evidence of Topological Surface States in Mg3Bi2 Films Grown by Molecular Beam Epitaxy

2019 ◽  
Vol 36 (11) ◽  
pp. 117303 ◽  
Author(s):  
Tong Zhou ◽  
Xie-Gang Zhu ◽  
Mingyu Tong ◽  
Yun Zhang ◽  
Xue-Bing Luo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Experimental Evidence ◽  
Molecular Beam ◽  
Surface States ◽  
Topological Surface

HCP-FCC Transition in Epitaxial Co-Cu Superlattices

1989 ◽  
Vol 151 ◽  
Author(s):  
F. J. Lamelas ◽  
C. H. Lee ◽  
Hui He ◽  
W. Vavra ◽  
Roy Clarke
Keyword(s):  
Molecular Beam Epitaxy ◽  
Magnetic Anisotropy ◽  
Detailed Analysis ◽  
Layer Thickness ◽  
Strong Correlation ◽  
Diffuse Scattering ◽  
Molecular Beam ◽  
Easy Axis ◽  
Structural Symmetry ◽  
X Ray

ABSTRACTA series of epitaxial Co-Cu superlattices has been grown on GaAs (110) substrates by molecular beam epitaxy. Detailed analysis of x-ray diffuse scattering scans along Co (101ℓ) reveals a crossover from from the bulk hcp phase of Co to metastable fcc stacking. Our measurements indicate a strong correlation between structural symmetry and the magnetic anisotropy in Co - noble metal superlattices. In particular, the perpendicular easy axis of magnetization onsets at Co layer thickness ♣ 19 Å in Cohcp-Au compared to only ˜11 Å in Cofcc-Cu.

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