Облучение ионами аргона Cr/4H-SiC-фотоприемников

The results of the effect of irradiation with Ar ions on the structural, electrophysical and optical characteristics of the ultraviolet Cr/4H-SiC photodetectors in the spectral range of 200−400 nm are presented. After a single irradiation with 53MeV Ar ions with a fluence of 1 · 1010 cm−2, the quantum efficiency of the photodetectors practically remained at the level of the initial samples due to the "gettering effect“ of simple radiation defects by cluster formations. The observed effect promoted a decrease in the number of simple radiation defects of the vacancy type, an increase in the lifetime of current carriers, and, as a consequence, unchanged values of the photoconductivity of Cr/4H-SiC photodetectors. After repeated irradiation of the photodetectors with Ar ions with a total fluence of 2 · 1010 cm−2, the decay of clusters was observed, the formation of a significant number of simple defect centers, which led to a decrease in the lifetime of current carriers and, as a consequence, to a decrease in photoconductivity of Cr/4H-SiC photodetectors.

Investigation of defect levels in Bi12SiO20 single crystals by thermally stimulated current measurements

Bi12SiO20 (BSO) single crystal belongs to the sillenite semiconducting family known as defective compounds. The present paper investigates the defect centers in BSO grown by Czochralski method by means of thermally stimulated current (TSC) measurements performed in the 10-260 K range. The TSC glow curve obtained at heating rate of β = 0.1 K/s presented several peaks associated with intrinsic defect centers. The activation energies of defect centers were revealed as 0.09, 0.15, 0.18, 0.22, 0.34, 0.70 and 0.82 eV accomplishing the curve fit analyses method. The peak maximum temperatures and orders of kinetics of each deconvoluted peak were also determined as an outcome of fitting process. TSC experiments were expanded by making the measurements at various heating rates between 0.1 and 0.3 K/s to get information about the heating rate dependent peak parameters.

Investigation of radiation defects in steatite ceramics SK-1 and SNC by the EPR method

The EPR spectra of γ- and n-γ-reactor irradiated steatite ceramics SK-1 and SNC has been studied. It is shown that structural defects of the E ′-center type are created in the structure of the SK-1 and SNC ceramics under the action of high doses of γ-irradiation. After n-γ-irradiation and additional annealing, paramagnetic defect centers such as interstitial Me2++e− ions are created in the structure of the SNC ceramics, which are caused by amorphization of the ceramic crystal phase and the creation of a Mg enriched glass phase at the interface between crystalline and amorphous phases.