Gallium-related defect centers in molecular-beam-epitaxy-grown ZnSe films: Influence of electric field on thermal emission of electrons

1993 ◽  
Vol 47 (15) ◽  
pp. 9641-9649 ◽  
Author(s):  
B. Hu ◽  
G. Karczewski ◽  
H. Luo ◽  
N. Samarth ◽  
J. K. Furdyna
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Molecular Beam ◽  
Thermal Emission ◽  
Defect Centers ◽  
Related Defect

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

Electric field mediated non-volatile tuning magnetism at the single-crystalline Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 interface

Nanoscale ◽  
2015 ◽  
Vol 7 (9) ◽  
pp. 4187-4192 ◽  
Author(s):  
Chao Zhang ◽  
Fenglong Wang ◽  
Chunhui Dong ◽  
Cunxu Gao ◽  
Chenglong Jia ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Field Control

We report non-volatile electric-field control of magnetism modulation in Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) heterostructure by fabricating an epitaxial Fe layer on a PMN-PT substrate using a molecular beam epitaxy technique.

Defects and Surfactant Action of Antimony on GaAs and GaAs1-xNx on GaAs [100] by Molecular Beam Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
W. K. Cheah ◽  
W. J. Fan ◽  
S. F. Yoon ◽  
S. Wicaksono ◽  
R. Liu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Dilute Nitride ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Mbe Growth ◽  
X Ray ◽  
Related Defect

ABSTRACTLow temperature (4.5K) photoluminescence (PL) measurements of GaAs(N):Sb on GaAs grown by solid source molecular beam epitaxy (MBE) show a Sb-related defect peak at ∼1017nm (1.22eV). The magnitude of the Sb-related impurity PL peak corresponds in intensity with the prominence of the additional two-dimensional [115] high-resolution x-ray diffraction (HRXRD) defect peaks. The elimination of these defects can be a measure of the improvement in crystal quality of GaAsN:Sb and a Sb flux ≥ 1.3×10−8 Torr is needed to invoke the surfactant behavior in III-V dilute nitride MBE growth for a growth rate of 1μm/hr.

Thermally stimulated current spectroscopy of carbon-doped GaN grown by molecular beam epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
Z-Q. Fang ◽  
D. C. Look ◽  
R. Armitage ◽  
Q. Yang ◽  
E. R. Weber
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Thermal Emission ◽  
Deep Level ◽  
High Resistivity ◽  
Organic Chemical ◽  
Thermally Stimulated Current ◽  
Chemical Phase ◽  
Metal Organic ◽  
Transient Spectroscopy

ABSTRACTDeep traps in semi-insulating (SI) or high-resistivity C-doped GaN grown by metal-organic chemical-phase deposition or molecular-beam epitaxy have been studied by thermally stimulated current (TSC) spectroscopy. Incorporation of carbon in GaN introduces CNacceptors, resulting in compensation and formation of SI-GaN; however, as [C] increases in the GaN samples, both resistivity and activation energy of the dark current decrease. In the GaN samples with low [C], we find at least six TSC traps: B (0.61 eV), Bx(0.50 eV), C1(0.44 eV), C (0.32 eV), D (0.23 eV), and E (0.16 eV), all of which are very similar to electron traps typically found in n-type GaN by deep level transient spectroscopy (DLTS). However, in the GaN sample with the highest [C], both traps E and B are suppressed, and instead, trap Bxappears. Based on DLTS studies of electron-irradiated and plasma-etched GaN samples, we believe that traps E, D and C are related to VN, and that trap B is probably related to VGa, in the form of complexes such as VGa-ON. As [C] increases, CGadonors become more favorable, and the transition of trap B to trap Bxmay suggest that CGarelated complexes are forming. In comparison with lightly C-doped GaN, heavily C-doped GaN sample exhibits very strong PPC at 83 K. We show that the PPC in both cases can be simply explained by the thermal emission of carriers from shallower traps.

Photoreflection study on the surface electric field of delta‐doped GaAs grown by molecular beam epitaxy

1992 ◽  
Vol 72 (4) ◽  
pp. 1468-1472 ◽  
Author(s):  
D. G. Liu ◽  
K. H. Chang ◽  
C. P. Lee ◽  
T. M. Hsu ◽  
Y. C. Tien
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Molecular Beam ◽  
Surface Electric Field
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