Interface Trap Characterization of a 5.8-$\hbox{\rm{ \AA}}$ EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique

2011 ◽  
Vol 58 (10) ◽  
pp. 3342-3349 ◽  
Author(s):  
Moonju Cho ◽  
Ben Kaczer ◽  
Marc Aoulaiche ◽  
Robin Degraeve ◽  
Philippe Roussel ◽  
...  
Keyword(s):  
High Frequency ◽  
Ring Oscillator ◽  
Interface Trap ◽  
Charge Pumping ◽  
On Chip

Challenges in Interface Trap Characterization of Deep Sub-Micron MOS Devices Using Charge Pumping Techniques

1999 ◽  
Vol 592 ◽  
Author(s):  
J.L. Autran ◽  
P. Masson ◽  
G. Ghibaudo
Keyword(s):  
Time Domain ◽  
Electrical Characterization ◽  
Time Domain Analysis ◽  
Interface Trap ◽  
Interface Traps ◽  
Electrical Behavior ◽  
Charge Pumping ◽  
Mos Devices ◽  
Technological Treatments

ABSTRACTThis work surveys some of our recent experimental and theoretical advances in charge pumping for the electrical characterization of interface traps present in MOSFET architectures. The first part of this paper is devoted to an improved time-domain analysis of the charge pumping phenomenon. This approach presents the main advantage to use the same formalism to describe the charge pumping contribution of a single trap or a continuum of traps at the Si-SiO2 interface. The implications for deepsubmicron MOSFET characterization are illustrated. Some experimental aspects are then presented, including the adaptation of the technique to ultra-thin oxides, non-planar oxides and DRAM memory cells. Finally, recent charge pumping characterization results are reported concerning the electrical behavior of the Si-SiO2 interface submitted to particular technological treatments, electrical and radiation stresses, or post-degradation anneals.

High-frequency characterization of on-chip digital interconnects

2002 ◽  
Vol 37 (6) ◽  
pp. 716-725 ◽  
Author(s):  
B. Kleveland ◽  
Xiaoning Qi ◽  
L. Madden ◽  
T. Furusawa ◽  
R.W. Dutton ◽  
...  
Keyword(s):  
High Frequency ◽  
On Chip

Accurate de-embedding technique for on-chip small-signal characterization of high-frequency optical modulator

1996 ◽  
Vol 8 (3) ◽  
pp. 402-404 ◽  
Author(s):  
K.K. Loi ◽  
I. Sakamoto ◽  
X.F. Shao ◽  
H.Q. Hou ◽  
H.H. Liao ◽  
...  
Keyword(s):  
High Frequency ◽  
Optical Modulator ◽  
Small Signal ◽  
Embedding Technique ◽  
On Chip ◽  
Signal Characterization

A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETs

2009 ◽  
Vol 56 (2) ◽  
pp. 267-274 ◽  
Author(s):  
Daming Huang ◽  
W. J. Liu ◽  
Zhiying Liu ◽  
C. C. Liao ◽  
Li-Fei Zhang ◽  
...  
Keyword(s):  
Interface Trap ◽  
Charge Pumping

scholarly journals Design and Characterization of Nano-Displacement Sensor with High-Frequency Oscillators

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Akio Kitagawa
Keyword(s):  
High Frequency ◽  
Oscillation Frequency ◽  
Target Object ◽  
Ring Oscillator ◽  
Displacement Sensor ◽  
Sensor Electrode ◽  
Free Running

The circuitry of a capacitive nanometer displacement sensor using the ring oscillator has been analyzed and characterized. We focus on the sensitivity of the sensor to detect the nanometer displacement or strain. The displaced target object must be conductive and the medium around the target object must be an insulator or a vacuum. The sensitivity in the range ofL< 1 μm is enhanced with decreases in the size of the sensor electrode, and using a higher free-running oscillation frequency can increase sensitivity. The proposed sensor, which converts the displacement of the target object to the oscillation frequency, was fabricated with CMOS 350 nm technology, and the sensitivity was estimated at 8.16 kHz/nm. The results of our study indicated that the presented sensor has enough sensitivity to detect the nanometer displacement of the target object at a distance within 1 μm from the surface of the sensor electrode.

scholarly journals Comparison of Different Large Signal Measurement Setups for High Frequency Inductors

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 691
Author(s):  
Jaime Lopez-Lopez ◽  
Cristina Fernandez ◽  
Andrés Barrado ◽  
Pablo Zumel
Keyword(s):  
Power Supply ◽  
High Frequency ◽  
Frequency Range ◽  
Good Match ◽  
Large Signal ◽  
Systematic Analysis ◽  
High Q ◽  
On Chip ◽  
Quality Factor Q

The growing interest of miniaturized power converters has pushed the development of high frequency inductors integrated in Power Supply on Chip or Power Supply in Package. The proper characterization of inductor impedance is a challenge due to the dependence of the impedance on the current, the high quality factor (Q) and the high frequency range where these devices operate. In this paper, we present a comparison of different measuring methods to characterize high frequency and high Q inductors. The comparison is based on a systematic analysis of the measurement process, quantifying the influence of the parameters that affect the measurement result. Four common measurement setups are analyzed and compared. To validate the calculations, the resistance of a high frequency, high-Q inductor is characterized using every presented setup. The good match between calculations, simulation and measurement validates the analysis and the conclusions extracted.

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