A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETs

2009 ◽  
Vol 56 (2) ◽  
pp. 267-274 ◽  
Author(s):  
Daming Huang ◽  
W. J. Liu ◽  
Zhiying Liu ◽  
C. C. Liao ◽  
Li-Fei Zhang ◽  
...  
Keyword(s):  
Interface Trap ◽  
Charge Pumping

Challenges in Interface Trap Characterization of Deep Sub-Micron MOS Devices Using Charge Pumping Techniques

1999 ◽  
Vol 592 ◽  
Author(s):  
J.L. Autran ◽  
P. Masson ◽  
G. Ghibaudo
Keyword(s):  
Time Domain ◽  
Electrical Characterization ◽  
Time Domain Analysis ◽  
Interface Trap ◽  
Interface Traps ◽  
Electrical Behavior ◽  
Charge Pumping ◽  
Mos Devices ◽  
Technological Treatments

ABSTRACTThis work surveys some of our recent experimental and theoretical advances in charge pumping for the electrical characterization of interface traps present in MOSFET architectures. The first part of this paper is devoted to an improved time-domain analysis of the charge pumping phenomenon. This approach presents the main advantage to use the same formalism to describe the charge pumping contribution of a single trap or a continuum of traps at the Si-SiO2 interface. The implications for deepsubmicron MOSFET characterization are illustrated. Some experimental aspects are then presented, including the adaptation of the technique to ultra-thin oxides, non-planar oxides and DRAM memory cells. Finally, recent charge pumping characterization results are reported concerning the electrical behavior of the Si-SiO2 interface submitted to particular technological treatments, electrical and radiation stresses, or post-degradation anneals.

Interface Trap Characterization of a 5.8-$\hbox{\rm{ \AA}}$ EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique

2011 ◽  
Vol 58 (10) ◽  
pp. 3342-3349 ◽  
Author(s):  
Moonju Cho ◽  
Ben Kaczer ◽  
Marc Aoulaiche ◽  
Robin Degraeve ◽  
Philippe Roussel ◽  
...  
Keyword(s):  
High Frequency ◽  
Ring Oscillator ◽  
Interface Trap ◽  
Charge Pumping ◽  
On Chip

Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

1991 ◽  
Vol 38 (8) ◽  
pp. 1820-1831 ◽  
Author(s):  
G. Van den bosch ◽  
G.V. Groeseneken ◽  
P. Heremans ◽  
H.E. Maes
Keyword(s):  
Interface Trap ◽  
Mos Transistors ◽  
Charge Pumping

Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments

2018 ◽  
Vol 767 ◽  
pp. 600-605 ◽  
Author(s):  
Bing Ren ◽  
Masatomo Sumiya ◽  
Meiyong Liao ◽  
Yasuo Koide ◽  
Xinke Liu ◽  
...  
Keyword(s):  
Surface Treatments ◽  
Interface Trap ◽  
Mos Capacitors
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