scholarly journals Comparison of Different Large Signal Measurement Setups for High Frequency Inductors

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 691
Author(s):  
Jaime Lopez-Lopez ◽  
Cristina Fernandez ◽  
Andrés Barrado ◽  
Pablo Zumel
Keyword(s):  
Power Supply ◽  
High Frequency ◽  
Frequency Range ◽  
Good Match ◽  
Large Signal ◽  
Systematic Analysis ◽  
High Q ◽  
On Chip ◽  
Quality Factor Q

The growing interest of miniaturized power converters has pushed the development of high frequency inductors integrated in Power Supply on Chip or Power Supply in Package. The proper characterization of inductor impedance is a challenge due to the dependence of the impedance on the current, the high quality factor (Q) and the high frequency range where these devices operate. In this paper, we present a comparison of different measuring methods to characterize high frequency and high Q inductors. The comparison is based on a systematic analysis of the measurement process, quantifying the influence of the parameters that affect the measurement result. Four common measurement setups are analyzed and compared. To validate the calculations, the resistance of a high frequency, high-Q inductor is characterized using every presented setup. The good match between calculations, simulation and measurement validates the analysis and the conclusions extracted.

Passive and Active Reduction Techniques for On-Chip High-Frequency Digital Power Supply Noise

2010 ◽  
Vol 18 (1) ◽  
pp. 157-161 ◽  
Author(s):  
Eric Bohannon ◽  
Christopher Urban ◽  
Mark Pude ◽  
Yoshinori Nishi ◽  
Anand Gopalan ◽  
...  
Keyword(s):  
Power Supply ◽  
High Frequency ◽  
Power Supply Noise ◽  
Reduction Techniques ◽  
Supply Noise ◽  
On Chip

scholarly journals A wideband cryogenic microwave low-noise amplifier

2020 ◽  
Vol 11 ◽  
pp. 1484-1491
Author(s):  
Boris I Ivanov ◽  
Dmitri I Volkhin ◽  
Ilya L Novikov ◽  
Dmitri K Pitsun ◽  
Dmitri O Moskalev ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Coplanar Waveguide ◽  
Noise Temperature ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Frequency Range ◽  
Noise Amplifier ◽  
On Chip

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

Impact of the 3D Stacking Power Supply on Chip for High Frequency DC-DC Converter

2016 ◽  
Author(s):  
K. Hiura ◽  
Y. Ikeda ◽  
Y. Hino ◽  
S. Matsumoto
Keyword(s):  
Power Supply ◽  
High Frequency ◽  
On Chip ◽  
3D Stacking

High Frequency Ultrasound, a Tool for Elastic Properties Measurement of Thin Films Fabricated on Silicon

2011 ◽  
Vol 324 ◽  
pp. 277-281 ◽  
Author(s):  
Pierre Campistron ◽  
Julien Carlier ◽  
Nadine Saad ◽  
Jamin Gao ◽  
Malika Toubal ◽  
...  
Keyword(s):  
Thin Films ◽  
Elastic Properties ◽  
High Frequency ◽  
Shear Waves ◽  
Thin Layers ◽  
Acoustic Properties ◽  
Frequency Range ◽  
Frequency Method ◽  
Longitudinal Waves

The main goal of this work is to develop an ultrasonic high frequency method for characterization of thin layers. The development of high frequency acoustic transducers for longitudinal waves and shear waves on silicon has enabeled the characterization of thin films deposited on this substrate. Three types of transducers have been achieved : (i) single crystal LiNbOSubscript text3 Y+163° for shear waves generation, and (ii) Y+36° for longitudinal waves, bonded and thinned on silicon substrate to achieve ultrasonic transducers in the frequency range 300-600 MHz ; (iii) thin films ZnO transducers were realized due to sputtering technologies working in the frequency range 1 GHz- 2.5 GHz. Using an inversion method and a network analyser which provide the scattering S11 parameter of the transducer versus the frequency we deduce the elastic properties of films deposited on the wafer surface. Thanks to these transducers the acoustic properties of thin films such as SU-8 based nanocomposites (doped with TiO2 , SrTiO3 or W nanoparticles) will be presented. In order to achieve mechanical impedance matching between silicon and water we control the mass of the embedded particles which provide a way to adjust the elastic properties of the characterized material. In another application an Indium metallic layer have been characterized in the high frequency range. We also use this method to characterize dielectric permittivity of the ZnO transducers.

High-frequency characterization of on-chip digital interconnects

2002 ◽  
Vol 37 (6) ◽  
pp. 716-725 ◽  
Author(s):  
B. Kleveland ◽  
Xiaoning Qi ◽  
L. Madden ◽  
T. Furusawa ◽  
R.W. Dutton ◽  
...  
Keyword(s):  
High Frequency ◽  
On Chip

Electrical characterization of nickel manganite powders in high-frequency range

2013 ◽  
Vol 554 ◽  
pp. 264-270 ◽  
Author(s):  
Goran M. Stojanović ◽  
Goran Kitić ◽  
Slavica M. Savić ◽  
Vesna Crnojević-Bengin
Keyword(s):  
High Frequency ◽  
Electrical Characterization ◽  
High Frequency Range ◽  
Frequency Range

Modeling and Simulation of Carbon Nanotube Interconnect Network

2007 ◽  
Vol 121-123 ◽  
pp. 1057-1060
Author(s):  
Chen Dong ◽  
Wei Wang ◽  
Maher Rizkalla
Keyword(s):  
Integrated Circuits ◽  
Modeling And Simulation ◽  
High Frequency ◽  
Preliminary Analysis ◽  
Potential Candidate ◽  
Good Match ◽  
Simulation Techniques ◽  
Frequency Independent ◽  
On Chip ◽  
Interconnect Network

The electrical properties of metallic carbon nanotubes (CNT) can rival, or even exceed, the best metals known. It is a potential candidate for future on-chip interconnect, whose performance will be dominant in the next generation integrated circuits. In this paper, a study on the modeling and simulation techniques for the CNT interconnect network is carried out. The frequency-independent models of CNT interconnects in terms of resistance, inductance and capacitance are summarized. A novel frequencydependent circuit model is proposed for CNT for various high-frequency applications. Preliminary analysis shows a good match between numerical simulations and the compact model. The proposed modeling and simulation techniques for CNT interconnect network are expected to play an important role in the future CNT nanotechnology applications.

GHz Heterogeneous Phononic Crystal Slab Resonators

2015 ◽  
Author(s):  
Razi Dehghannasiri ◽  
Reza Pourabolghasem ◽  
Ali Asghar Eftekhar ◽  
Ali Adibi
Keyword(s):  
Wireless Communications ◽  
High Frequency ◽  
Phononic Crystal ◽  
Smooth Transition ◽  
Frequency Range ◽  
High Q ◽  
Guided Modes

In this paper, we present a new design for waveguide-based phononic crystal (PnC) resonators in pillar-based piezoelectric membranes at the GHz frequency range based on mode-gap waveguide termination. The mode confinement in these resonators is achieved by a smooth transition from a phononic waveguide to another phononic waveguide that does not support (and therefore reflects) the guided modes of the first waveguide over a certain frequency range. These resonators can be utilized for applications including wireless communications and sensing [1, 2] where high-Q and high-frequency resonators are highly desirable.

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